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dc.contributor.authorLiu, Houfangen_US
dc.contributor.authorLu, Tianqien_US
dc.contributor.authorLi, Yuxingen_US
dc.contributor.authorJu, Zhenyien_US
dc.contributor.authorZhao, Ruitingen_US
dc.contributor.authorLi, Jingzhouen_US
dc.contributor.authorShao, Minghaoen_US
dc.contributor.authorZhang, Hainanen_US
dc.contributor.authorLiang, Renrongen_US
dc.contributor.authorWang, Renshaw Xiaoen_US
dc.contributor.authorGuo, Ruien_US
dc.contributor.authorChen, Jingshengen_US
dc.contributor.authorYang, Yien_US
dc.contributor.authorRen, Tian-Lingen_US
dc.identifier.citationLiu, H., Lu, T., Li, Y., Ju, Z., Zhao, R., Li, J., . . . Ren, T.-L. (2020). Flexible quasi‐van der Waals ferroelectric hafnium‐based oxide for integrated high‐performance nonvolatile memory. Advanced Science, 7(19), 2001266-. doi:10.1002/advs.202001266en_US
dc.description.abstractFerroelectric memories with ultralow‐power‐consumption are attracting a great deal of interest with the ever‐increasing demand for information storage in wearable electronics. However, sufficient scalability, semiconducting compatibility, and robust flexibility of the ferroelectric memories remain great challenges, e.g., owing to Pb‐containing materials, oxide electrode, and limited thermal stability. Here, high‐performance flexible nonvolatile memories based on ferroelectric Hf0.5Zr0.5O2 (HZO) via quasi‐van der Waals heteroepitaxy are reported. The flexible ferroelectric HZO exhibits not only high remanent polarization up to 32.6 µC cm−2 without a wake‐up effect during cycling, but also remarkably robust mechanical properties, degradation‐free retention, and endurance performance under a series of bent deformations and cycling tests. Intriguingly, using HZO as a gate, flexible ferroelectric thin‐film transistors with a low operating voltage of ±3 V, high on/off ratio of 6.5  ×  105, and a small subthreshold slope of about 100 mV dec−1, which outperform reported flexible ferroelectric transistors, are demonstrated. The results make ferroelectric HZO a promising candidate for the next‐generation of wearable, low‐power, and nonvolatile memories with manufacturability and scalability.en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.description.sponsorshipNanyang Technological Universityen_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.relation.ispartofAdvanced Scienceen_US
dc.rights© 2020 The Authors. Published by Wiley‐VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleFlexible quasi‐van der Waals ferroelectric hafnium‐based oxide for integrated high‐performance nonvolatile memoryen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.versionPublished versionen_US
dc.subject.keywordsFerroelectric Materialsen_US
dc.subject.keywordsFlexible Electronicsen_US
dc.description.acknowledgementThis work was supported by the National Key R&D Program (2016YFA0200400) and National Natural Science Foundation (61434001, 61574083, 61874065, and 51861145202). The authors are also thankful for the support of the Research Fund from Beijing Innovation Center for Future Chip, Beijing Natural Science Foundation (4184091), Shenzhen Science and Technology Program (JCYJ20150831192224146), and Open Research Fund Program of the State Key Laboratory of Low‐Dimensional Quantum Physics (KF201715). The authors are also thankful for the support of Foshan‐Tsinghua Innovation Special Fund (2018THFS0411 and 2018THFS0415). X.R.W. acknowledges supports from the Nanyang Assistant Professorship grant from Nanyang Technological University, Academic Research Fund Tier 1 (Grant No. RG177/18) from Singapore Ministry of Education, and the Singapore National Research Foundation (NRF) under the competitive Research Programs (CRP Grant No. NRF‐CRP21‐2018‐0003). The authors thank Caihua Wan from Institute of Physics, University of Chinese Academy of Science for insightful discussions about the paper.en_US
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