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Title: Flexible quasi‐van der Waals ferroelectric hafnium‐based oxide for integrated high‐performance nonvolatile memory
Authors: Liu, Houfang
Lu, Tianqi
Li, Yuxing
Ju, Zhenyi
Zhao, Ruiting
Li, Jingzhou
Shao, Minghao
Zhang, Hainan
Liang, Renrong
Wang, Renshaw Xiao
Guo, Rui
Chen, Jingsheng
Yang, Yi
Ren, Tian-Ling
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2020
Source: Liu, H., Lu, T., Li, Y., Ju, Z., Zhao, R., Li, J., . . . Ren, T.-L. (2020). Flexible quasi‐van der Waals ferroelectric hafnium‐based oxide for integrated high‐performance nonvolatile memory. Advanced Science, 7(19), 2001266-. doi:10.1002/advs.202001266
Project: RG177/18
Journal: Advanced Science 
Abstract: Ferroelectric memories with ultralow‐power‐consumption are attracting a great deal of interest with the ever‐increasing demand for information storage in wearable electronics. However, sufficient scalability, semiconducting compatibility, and robust flexibility of the ferroelectric memories remain great challenges, e.g., owing to Pb‐containing materials, oxide electrode, and limited thermal stability. Here, high‐performance flexible nonvolatile memories based on ferroelectric Hf0.5Zr0.5O2 (HZO) via quasi‐van der Waals heteroepitaxy are reported. The flexible ferroelectric HZO exhibits not only high remanent polarization up to 32.6 µC cm−2 without a wake‐up effect during cycling, but also remarkably robust mechanical properties, degradation‐free retention, and endurance performance under a series of bent deformations and cycling tests. Intriguingly, using HZO as a gate, flexible ferroelectric thin‐film transistors with a low operating voltage of ±3 V, high on/off ratio of 6.5  ×  105, and a small subthreshold slope of about 100 mV dec−1, which outperform reported flexible ferroelectric transistors, are demonstrated. The results make ferroelectric HZO a promising candidate for the next‐generation of wearable, low‐power, and nonvolatile memories with manufacturability and scalability.
ISSN: 2198-3844
DOI: 10.1002/advs.202001266
Schools: School of Physical and Mathematical Sciences 
School of Electrical and Electronic Engineering 
Rights: © 2020 The Authors. Published by Wiley‐VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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SPMS Journal Articles

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