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Title: Higher‐order topological states in surface‐wave photonic crystals
Authors: Zhang, Li
Yang, Yihao
Lin, Zhi-Kang
Qin, Pengfei
Chen, Qiaolu
Gao, Fei
Li, Erping
Jiang, Jian-Hua
Zhang, Baile
Chen, Hongsheng
Keywords: Science::Physics
Issue Date: 2020
Source: Zhang, L., Yang, Y., Lin, Z.-K., Qin, P., Chen, Q., Gao, F., . . . Chen, H. (2020). Higher‐order topological states in surface‐wave photonic crystals. Advanced Science, 7(6), 1902724-. doi:10.1002/advs.201902724
Project: MOE2018‐T2‐1‐022 (S) 
RG174/16 (S) 
Journal: Advanced Science 
Abstract: Photonic topological states have revolutionized the understanding of the propagation and scattering of light. The recent discovery of higher‐order photonic topological insulators opens an emergent horizon for 0D topological corner states. However, the previous realizations of higher‐order topological insulators in electromagnetic‐wave systems suffer from either a limited operational frequency range due to the lumped components involved or a bulky structure with a large footprint, which are unfavorable for achieving compact photonic devices. To overcome these limitations, a planar surface‐wave photonic crystal realization of 2D higher‐order topological insulators is hereby demonstrated experimentally. The surface‐wave photonic crystals exhibit a very large bulk bandgap (a bandwidth of 28%) due to multiple Bragg scatterings and host 1D gapped edge states described by massive Dirac equations. The topology of those higher‐dimensional photonic bands leads to the emergence of in‐gap 0D corner states, which provide a route toward robust cavity modes for scalable compact photonic devices.
ISSN: 2198-3844
DOI: 10.1002/advs.201902724
DOI (Related Dataset): 10.21979/N9/OZATGF
Rights: © 2020 The Authors. Published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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