Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/145696
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dc.contributor.authorLi, Xiangen_US
dc.contributor.authorWang, Hongen_US
dc.contributor.authorQiao, Zhongliangen_US
dc.contributor.authorSia, Brian Jia Xuen_US
dc.contributor.authorWang, Wanjunen_US
dc.contributor.authorGuo, Xinen_US
dc.contributor.authorZhang, Yuen_US
dc.contributor.authorNiu, Zhichuanen_US
dc.contributor.authorTong, Cunzhuen_US
dc.contributor.authorLiu, Chongyangen_US
dc.date.accessioned2021-01-05T03:47:43Z-
dc.date.available2021-01-05T03:47:43Z-
dc.date.issued2020-
dc.identifier.citationLi, X., Wang, H., Qiao, Z., Sia, B. J. X., Wang, W., Guo, X., . . . Liu, C. (2020). Temperature-dependent phase noise properties of a two-section GaSb-based mode-locked laser emitting at 2 μm. Applied Physics Letters, 117(14), 141103-. doi:10.1063/5.0024064en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttps://hdl.handle.net/10356/145696-
dc.description.abstractThe temperature-dependent phase noise properties of a monolithic two-section mode-locked semiconductor laser are first investigated. This is performed on a GaSb-based quantum well laser emitting at ∼2 μm. Stable mode locking operation with a fundamental repetition frequency of ∼13.3 GHz is achieved on this laser up to 60 °C. At a fixed temperature, there is no monotonous dependence of integrated jitter on the bias condition. For a given gain current or absorber voltage, there exists a corresponding optimal absorber voltage or gain current, respectively, that minimizes the integrated jitter. More important, the phase noise properties improve obviously at elevated temperatures with the lowest achievable jitter reducing obviously from 3.15 ps at 20 °C to 1.39 ps at 60 °C (100 kHz–1 GHz). We consider that the reason is reduced amplified spontaneous emission noise at high temperatures. This is confirmed by the extracted peak-to-valley ratio of the involved laser modes. We believe that this study provides an important insight into the carrier behaviors and noise performance of mode-locked semiconductor lasers, which is meaningful to their applications especially at high temperatures.en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.language.isoenen_US
dc.relationNRF-CRP12-2013-04en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rights© 2020 The Author(s). All rights reserved. This paper was published by AIP in Applied Physics Letters and is made available with permission of The Author(s).en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleTemperature-dependent phase noise properties of a two-section GaSb-based mode-locked laser emitting at 2 μmen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.researchTemasek Laboratories @ NTUen_US
dc.identifier.doi10.1063/5.0024064-
dc.description.versionPublished versionen_US
dc.identifier.issue14en_US
dc.identifier.volume117en_US
dc.subject.keywordsPhase Noiseen_US
dc.subject.keywordsTemperature Dependenten_US
dc.description.acknowledgementThis work was supported in part by the National Research Foundation of Singapore (No. NRF-CRP12-2013-04), the National Natural Science Foundation of China (Nos. 61964007 and 61790582), and the Key-Area Research and Development Program of Guangdong Province (No. 2020B0303020001).en_US
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