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Title: Alteration of gate-oxide trap capture/emission time constants by channel hot-carrier effect in the metal-oxide-semiconductor field-effect transistor
Authors: Ju, Xin
Ang, Diing Shenp
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2020
Source: Ju, X., & Ang, D. S. (2020). Alteration of gate-oxide trap capture/emission time constants by channel hot-carrier effect in the metal-oxide-semiconductor field-effect transistor. IEEE Access, 8, 14048-14053. doi:10.1109/ACCESS.2020.2966577
Project: MOE2016-T2-2-102
Journal: IEEE Access
Abstract: Electrical-stress-invariant gate-oxide traps' capture and emission time constants have been the basis of aging models as well as applications that leverage the stochastic nature of the capture and emission processes, such as the true random number generator. In this work, we show that this presumption is only valid for about two-thirds of the oxide-trap population studied. For the remaining one-third, the traps' capture and/or emission time constants could be changed by the channel hot-carrier (CHC) effect. Such a behavior is found in both polysilicon/silicon oxynitride gated and TiN/HfO2 gated transistors. A reversion of the altered trap time constant to the value before the CHC-stress is also observed, but the period varies significantly for different traps (from several hours to months). Since the CHC stress effect is present in all scaled transistors, the findings would have important implications for models/applications that presume oxide-trap properties to be stress-invariant.
ISSN: 2169-3536
DOI: 10.1109/ACCESS.2020.2966577
Rights: © 2020 IEEE. This journal is 100% open access, which means that all content is freely available without charge to users or their institutions. All articles accepted after 12 June 2019 are published under a CC BY 4.0 license, and the author retains copyright. Users are allowed to read, download, copy, distribute, print, search, or link to the full texts of the articles, or use them for any other lawful purpose, as long as proper attribution is given.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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