Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/145876
Title: 3D geometric engineering of the double wedge-like electrodes for filament-type RRAM device performance improvement
Authors: Sun, Jianxun
Li, Yuanbo
Ye, Yiyang
Zhang, Jun
Chong, Gang Yih
Tan, Juan Boon
Liu, Zhen
Chen, Tupei
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2020
Source: Sun, J., Li, Y., Ye, Y., Zhang, J., Chong, G. Y., Tan, J. B., . . . Chen, T. (2020). 3D geometric engineering of the double wedge-like electrodes for filament-type RRAM device performance improvement. IEEE Access, 8, 4924-4934. doi:10.1109/ACCESS.2019.2962869
Project: NRF-CRP13-2014-02
RCA-16/335
Journal: IEEE Access
Abstract: The resistive switching variability and reliability degradation are the two major challenges that hinder the high-volume production of the Resistive Random Access Memory (RRAM) devices. In this work, a 3D electrode structure engineering method is proposed. The geometric parameters defined as electrode angle (EA), electrodes spacing (ES) and electrode trench depth (ETD) associated with the double wedge-like electrodes of the filament-type RRAM devices are studied for the first time. Our experimental results show that apart from the resistive switching uniformity, the reliability performance such as cycling endurance and data retention are significantly improved for the device with small EA (90°), narrow ES (440 nm) and deep ETD (90 nm) owing to the electric field confinement and enhancement. Thus, this new approach can be served as a guideline for the design and optimization of the filament-type RRAM devices.
URI: https://hdl.handle.net/10356/145876
ISSN: 2169-3536
DOI: 10.1109/ACCESS.2019.2962869
Schools: School of Electrical and Electronic Engineering 
Research Centres: Nanyang Nanofabrication Centre 
Rights: © 2020 IEEE. This journal is 100% open access, which means that all content is freely available without charge to users or their institutions. All articles accepted after 12 June 2019 are published under a CC BY 4.0 license, and the author retains copyright. Users are allowed to read, download, copy, distribute, print, search, or link to the full texts of the articles, or use them for any other lawful purpose, as long as proper attribution is given.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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