Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/146088
Title: | Spatial variations of valley splitting in monolayer transition metal dichalcogenide | Authors: | Zou, Chenji Zhang, Hongbo Chen, Yu Feng, Shun Wu, Lishu Zhang, Jing Yu, Ting Shang, Jingzhi Cong, Chunxiao |
Keywords: | Science::Physics | Issue Date: | 2020 | Source: | Zou, C., Zhang, H., Chen, Y., Feng, S., Wu, L., Zhang, J., . . . Cong, C. (2020). Spatial variations of valley splitting in monolayer transition metal dichalcogenide. InfoMat, 2(3), 585-592. doi:10.1002/inf2.12050 | Project: | RG199/17 | Journal: | InfoMat | Abstract: | In monolayer group‐VI transition metal dichalcogenides (TMDs), valley splitting features have received a lot of attention since it can be potentially utilized for information storing and processing. Among the known two‐dimensional (2D) TMDs, monolayer WSe2 or MoSe2 has been mostly selected for excitonic and valleytronic physics studies because of its sharp and well‐resolved excitonic spectral features. Meanwhile, their high optical quality leads to a tremendous desire for developing promising WSe2‐ and MoSe2‐based valleytronic devices. Toward this goal, exploring the uniformity of valley features crossing an entire piece of monolayer becomes necessary and critical. Here, we performed the systematic magneto‐photoluminescence mapping measurements on mechanically exfoliated monolayer WSe2 and observed unconventional spatial variations of valley splitting. The observed nonuniformity is attributed to the modulated doping, which is probably due to the different distributions of unintentional absorbates across the sample. Such an unexpected doping effect shows the nonnegligible influence on the valley Zeeman splitting of the trion emission (XT) while affecting that of the neutral exciton emission (X0) trivially, evidencing for the large valleytronic sensitivity of the charged exciton. This work not only enriches the understanding of the doping effect on valley splitting but also is meaningful for developing 2D valleytronics. | URI: | https://hdl.handle.net/10356/146088 | ISSN: | 2567-3165 | DOI: | 10.1002/inf2.12050 | Rights: | © 2019 The Authors. InfoMat published by John Wiley & Sons Australia, Ltd on behalf of UESTC. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | SPMS Journal Articles |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
inf2.12050.pdf | 5.37 MB | Adobe PDF | View/Open |
PublonsTM
Citations
50
1
Updated on Mar 5, 2021
Page view(s)
143
Updated on Jun 25, 2022
Download(s)
10
Updated on Jun 25, 2022
Google ScholarTM
Check
Altmetric
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.