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Title: Spatial structure of lasing modes in wave-chaotic semiconductor microcavities
Authors: Bittner, Stefan
Kim, Kyungduk
Zeng, Yongquan
Wang, Qi Jie
Cao, Hui
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2020
Source: Bittner, S., Kim, K., Zeng, Y., Wang, Q. J., & Cao, H. (2020). Spatial structure of lasing modes in wave-chaotic semiconductor microcavities. New Journal of Physics, 22(8), 083002-. doi:10.1088/1367-2630/ab9e33
Project: MOE2016-T2-1-128
Journal: New Journal of Physics
Abstract: We present experimental and numerical studies of broad-area semiconductor lasers with chaotic ray dynamics. The emission intensity distributions at the cavity boundaries are measured and compared to ray tracing simulations and numerical calculations of the passive cavity modes. We study two different cavity geometries, a D-cavity and a stadium, both of which feature fully chaotic ray dynamics. While the far-field distributions exhibit fairly homogeneous emission in all directions, the emission intensity distributions at the cavity boundary are highly inhomogeneous, reflecting the non-uniform intensity distributions inside the cavities. The excellent agreement between experiments and simulations demonstrates that the intensity distributions of wave-chaotic semiconductor lasers are primarily determined by the cavity geometry. This is in contrast to conventional Fabry–Perot broad-area lasers for which the intensity distributions are to a large degree determined by the nonlinear interaction of the lasing modes with the semiconductor gain medium.
ISSN: 1367-2630
DOI: 10.1088/1367-2630/ab9e33
Rights: © 2020 The Author(s). Published by IOP Publishing Ltd on behalf of the Institute of Physics and Deutsche Physikalische Gesellschaf. Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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