Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/146520
Title: Suppressed deep traps and bandgap fluctuations in Cu2CdSnS4 solar cells with ≈8% efficiency
Authors: Hadke, Shreyash
Levcenko, Sergiu
Gautam, Gopalakrishnan Sai
Hages, Charles J.
Márquez, José A.
Izquierdo-Roca, Victor
Carter, Emily A.
Unold, Thomas
Wong, Lydia Helena
Keywords: Engineering::Materials
Issue Date: 2019
Source: Hadke, S., Levcenko, S., Gautam, G. S., Hages, C. J., Márquez, J. A., Izquierdo‐Roca, V., ... Wong, L. H. (2019). Suppressed deep traps and bandgap fluctuations in Cu2CdSnS4 solar cells with ≈8% efficiency. Advanced Energy Materials, 9(45), 1902509-. doi:10.1002/aenm.201902509
Project: Ministry of Education (MOE) Tier 2 Project (MOE2016-T2-1-030) 
Journal: Advanced Energy Materials 
Abstract: The identification of performance-limiting factors is a crucial step in the development of solar cell technologies. Cu2ZnSn(S,Se)4-based solar cells have shown promising power conversion efficiencies in recent years, but their performance remains inferior compared to other thin-film solar cells. Moreover, the fundamental material characteristics that contribute to this inferior performance are unclear. In this paper, the performance-limiting role of deep-trap-level-inducing 2CuZn+SnZn defect clusters is revealed by comparing the defect formation energies and optoelectronic characteristics of Cu2ZnSnS4 and Cu2CdSnS4. It is shown that these deleterious defect clusters can be suppressed by substituting Zn with Cd in a Cu-poor compositional region. The substitution of Zn with Cd also significantly reduces the bandgap fluctuations, despite the similarity in the formation energy of the CuZn+ZnCu and CuCd+CdCu antisites. Detailed investigation of the Cu2CdSnS4 series with varying Cu/[Cd+Sn] ratios highlights the importance of Cu-poor composition, presumably via the presence of VCu, in improving the optoelectronic properties of the cation-substituted absorber. Finally, a 7.96% efficient Cu2CdSnS4 solar cell is demonstrated, which shows the highest efficiency among fully cation-substituted absorbers based on Cu2ZnSnS4.
URI: https://hdl.handle.net/10356/146520
ISSN: 1614-6840
DOI: 10.1002/aenm.201902509
Schools: School of Materials Science and Engineering 
Research Centres: Energy Research Institute @ NTU (ERI@N) 
Campus for Research Excellence and Technological Enterprise (CREATE)
Rights: This is the peer reviewed version of the following article: Hadke, S., Levcenko, S., Gautam, G. S., Hages, C. J., Márquez, J. A., Izquierdo‐Roca, V., ... Wong, L. H. (2019). Suppressed deep traps and bandgap fluctuations in Cu2CdSnS4 solar cells with ≈8% efficiency. Advanced Energy Materials, 9(45), 1902509-. doi:10.1002/aenm.201902509, which has been published in final form at https://doi.org/10.1002/aenm.201902509. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

Files in This Item:
File Description SizeFormat 
2019 - AEnM - CCTS.pdf4.15 MBAdobe PDFThumbnail
View/Open

SCOPUSTM   
Citations 5

65
Updated on Mar 24, 2024

Web of ScienceTM
Citations 5

54
Updated on Oct 26, 2023

Page view(s)

316
Updated on Mar 28, 2024

Download(s) 50

129
Updated on Mar 28, 2024

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.