Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/146659
Title: Stable mode-locked operation with high temperature characteristics of a two-section InGaAs/GaAs double quantum wells laser
Authors: Qiao, Zhongliang
Li, Xiang
Sia, Jia Xubrian
Wang, Wanjun
Wang, Hong
Li, Lin
Li, Zaijin
Zhao, Zhibin
Qu, Yi
Gao, Xin
Bo, Baoxue
Liu, Chongyang
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2021
Source: Qiao, Z., Li, X., Sia, J. X., Wang, W., Wang, H., Li, L., . . . Liu, C. (2021). Stable mode-locked operation with high temperature characteristics of a two-section InGaAs/GaAs double quantum wells laser. IEEE Access, 9, 16608-16614. doi:10.1109/ACCESS.2021.3051179
Journal: IEEE Access
Abstract: A monolithic two-section InGaAs/GaAs double quantum wells (DQWs) mode-locked laser (MLL) emitting at 1.06~\mu \text{m} is demonstrated. Stable mode locking operation is achieved up to 80 °C. The fundamental repetition rate is at 9.51 GHz with a signal-to-noise ratio (SNR) of more than 55 dB, and up to the fourth harmonic at 38.04 GHz is observed. The characteristic temperature ( T_{0} ) of the laser and the influences of absorber bias voltage on T_{0} have been systematically investigated. From our findings, T_{0} shows a two-segment feature, and is slightly affected by the absorber bias voltage for photon saturation.
URI: https://hdl.handle.net/10356/146659
ISSN: 2169-3536
DOI: 10.1109/ACCESS.2021.3051179
Rights: © 2021 IEEE. This journal is 100% open access, which means that all content is freely available without charge to users or their institutions. All articles accepted after 12 June 2019 are published under a CC BY 4.0 license, and the author retains copyright. Users are allowed to read, download, copy, distribute, print, search, or link to the full texts of the articles, or use them for any other lawful purpose, as long as proper attribution is given.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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