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Title: Surface plasmon enhanced GeSn photodetectors operating at 2 μm
Authors: Zhou, Hao
Zhang, Lin
Tong, Jinchao
Wu, Shaoteng
Son, Bongkwon
Chen, Qimiao
Zhang, Dao Hua
Tan, Chuan Seng
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2021
Source: Zhou, H., Zhang, L., Tong, J., Wu, S., Son, B., Chen, Q., ... Tan, C. S. (2021). Surface plasmon enhanced GeSn photodetectors operating at 2 μm. Optics Express, 29(6), 8498-8509. doi:10.1364/OE.420543
Project: NRF– CRP19–2017–01
2019-T1-002-040 RG147/19 (S)
Journal: Optics Express
Abstract: Au-hole array and Au-GeSn grating structures were designed and incorporated in GeSn metal-semiconductor-metal (MSM) photodetectors for enhanced photo detection at 2 µm. Both plasmonic structures are beneficial for effective optical confinement near the surface due to surface plasmon resonance (SPR), contributing to an enhanced responsivity. The responsivity enhancement for Au hole-array structure is insensitive to the polarization direction, while the enhancement for Au-GeSn grating structure depends on the polarization direction. The responsivity for GeSn photodetector with Au hole-array structure has ∼50% reinforcement compared with reference photodetector. On the other hand, Au-GeSn grating structure benefits a 3× enhanced responsivity of 0.455 A/W at 1.5V under TM-polarized illumination. The achieved responsivity is among the highest values for GeSn photodetectors operating at 2 µm. The plasmonic GeSn photodetectors in this work offer an alternative solution for high-efficiency photo detection, manifesting their great potentials as candidates for 2 µm optical communication and other emerging applications.
ISSN: 1094-4087
DOI: 10.1364/OE.420543
Rights: © 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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