Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/146740
Title: Van der Waals engineering of ferroelectric heterostructures for long-retention memory
Authors: Wang, Xiaowei
Zhu, Chao
Deng, Ya
Duan, Ruihuan
Chen, Jieqiong
Zeng, Qingsheng
Zhou, Jiadong
Fu, Qundong
You, Lu
Liu, Song
Edgar, James H.
Yu, Peng
Liu, Zheng
Keywords: Engineering::Materials
Issue Date: 2021
Source: Wang, X., Zhu, C., Deng, Y., Duan, R., Chen, J., Zeng, Q., ... Liu, Z. (2021). Van der Waals engineering of ferroelectric heterostructures for long-retention memory. Nature Communications, 12(1), 1-8. doi:10.1038/s41467-021-21320-2
Project: MOE2017-T2-2-136
MOE2018-T3-1-002
NRF-CRP21-2018-0007
NRF-CRP22-2019-0060
Journal: Nature Communications
Abstract: The limited memory retention for a ferroelectric field-effect transistor has prevented the commercialization of its nonvolatile memory potential using the commercially available ferroelectrics. Here, we show a long-retention ferroelectric transistor memory cell featuring a metal-ferroelectric-metal-insulator-semiconductor architecture built from all van der Waals single crystals. Our device exhibits 17 mV dec−1 operation, a memory window larger than 3.8 V, and program/erase ratio greater than 107. Thanks to the trap-free interfaces and the minimized depolarization effects via van der Waals engineering, more than 104 cycles endurance, a 10-year memory retention and sub-5 μs program/erase speed are achieved. A single pulse as short as 100 ns is enough for polarization reversal, and a 4-bit/cell operation of a van der Waals ferroelectric transistor is demonstrated under a 100 ns pulse train. These device characteristics suggest that van der Waals engineering is a promising direction to improve ferroelectronic memory performance and reliability for future applications.
URI: https://hdl.handle.net/10356/146740
ISSN: 2041-1723
DOI: 10.1038/s41467-021-21320-2
Rights: © 2021 The Authors. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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