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dc.contributor.authorKang, Lixingen_US
dc.contributor.authorYe, Chenen_US
dc.contributor.authorZhao, Xiaoxuen_US
dc.contributor.authorZhou, Xieyuen_US
dc.contributor.authorHu, Junxiongen_US
dc.contributor.authorLi, Qiaoen_US
dc.contributor.authorLiu, Danen_US
dc.contributor.authorDas, Chandreyee Manasen_US
dc.contributor.authorYang, Jiefuen_US
dc.contributor.authorHu, Dianyien_US
dc.contributor.authorChen, Jieqiongen_US
dc.contributor.authorCao, Xunen_US
dc.contributor.authorZhang, Yongen_US
dc.contributor.authorXu, Manzhangen_US
dc.contributor.authorDi, Junen_US
dc.contributor.authorTian, Danen_US
dc.contributor.authorSong, Pinen_US
dc.contributor.authorKutty, Govindanen_US
dc.contributor.authorZeng, Qingshengen_US
dc.contributor.authorFu, Qundongen_US
dc.contributor.authorDeng, Yaen_US
dc.contributor.authorZhou, Jiadongen_US
dc.contributor.authorAriando, Ariandoen_US
dc.contributor.authorMiao, Fengen_US
dc.contributor.authorHong, Guoen_US
dc.contributor.authorHuang, Yizhongen_US
dc.contributor.authorPennycook, Stephen J.en_US
dc.contributor.authorYong, Ken-Tyeen_US
dc.contributor.authorJi, Weien_US
dc.contributor.authorWang, Renshaw Xiaoen_US
dc.contributor.authorLiu, Zhengen_US
dc.identifier.citationKang, L., Ye, C., Zhao, X., Zhou, X., Hu, J., Li, Q., ... Liu, Z. (2020). Phase-controllable growth of ultrathin 2D magnetic FeTe crystals. Nature Communications, 11(1), 1-9. doi:10.1038/s41467-020-17253-xen_US
dc.description.abstractTwo-dimensional (2D) magnets with intrinsic ferromagnetic/antiferromagnetic (FM/AFM) ordering are highly desirable for future spintronic devices. However, the direct growth of their crystals is in its infancy. Here we report a chemical vapor deposition approach to controllably grow layered tetragonal and non-layered hexagonal FeTe nanoplates with their thicknesses down to 3.6 and 2.8 nm, respectively. Moreover, transport measurements reveal these obtained FeTe nanoflakes show a thickness-dependent magnetic transition. Antiferromagnetic tetragonal FeTe with the Néel temperature (TN) gradually decreases from 70 to 45 K as the thickness declines from 32 to 5 nm. And ferromagnetic hexagonal FeTe is accompanied by a drop of the Curie temperature (TC) from 220 K (30 nm) to 170 K (4 nm). Theoretical calculations indicate that the ferromagnetic order in hexagonal FeTe is originated from its concomitant lattice distortion and Stoner instability. This study highlights its potential applications in future spintronic devices.en_US
dc.description.sponsorshipAgency for Science, Technology and Research (A*STAR)en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.relationNRF2017-NRF-ANR002 2DPSen_US
dc.relationA*Star QTE programmeen_US
dc.relation.ispartofNature Communicationsen_US
dc.rights© 2020 The Authors. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit
dc.titlePhase-controllable growth of ultrathin 2D magnetic FeTe crystalsen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.contributor.researchCINTRA CNRS/NTU/THALESen_US
dc.contributor.researchResearch Techno Plazaen_US
dc.contributor.researchCentre for Micro-/Nano-electronics (NOVITAS)en_US
dc.description.versionPublished versionen_US
dc.subject.keywordsMaterials Scienceen_US
dc.subject.keywordsNanoscience and Technologyen_US
dc.description.acknowledgementThis work was supported by the Singapore National Research Foundation Singapore programme NRF-CRP21-2018- 0007, Singapore Ministry of Education via AcRF Tier 3 Programme ‘Geometrical Quantum Materials’ (MOE2018-T3-1-002), AcRF Tier 2 (MOE2016-T2-1-131, MOE2017-T2-2-136, AcRF Tier 2 MOE2017-T2-2-002 and MOE2019-T2-1-044. This work is was also supported by NRF2017-NRF-ANR002 2DPS and A*Star QTE programme. X.R.W. acknowledges supports from the Nanyang Assistant Professorship grant from Nanyang Technological University and Academic Research Fund Tier 1 (Grant No. RG177/18) and the Singapore National Research Foundation (NRF) under the competitive Research Programs (CRP Grant No. NRF-CRP21-2018-0003). S.J.P. is grateful to the National University of Singapore for funding and MOE for a Tier 2 (Grant No. MOE2017-T2-2-139). J.X.H. and A.A. thank the Agency for Science, Technology, and Research (A*STAR) under its Advanced Manufacturing and Engineering (AME) Individual Research Grant (IRG) (A1983c0034) and the Singapore National Research Foundation (NRF) under the Competitive Research Programs (CRP Award No. NRF-CRP15-2015-01) for the financial support. G.H. acknowledges the fund of University of Macau (SRG2017-00092-IAPME, MYRG2018-00079-IAPME, MYRG2019-00115-IAPME), and the Science and Technology Development Fund, Macau SAR (FDCT081/2017/A2, FDCT0059/2018/A2, FDCT009/2017/AMJ). W.J. and D.T. also gratefully acknowledge financial support from the National Natural Science Foundation of China (Grant Nos. 11622437, 61674171, 11974422, and 21601086), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB30000000), the Fundamental Research Funds for the Central Universities, China, the Research Funds of Renmin University of China (Grants Nos. 16XNLQ01 (W.J.), 19XNQ025 (W.J.), and 19XNH065 (X. Z.)), the Natural Science Foundation of Jiangsu Province (Grant No. BK20160994).en_US
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