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https://hdl.handle.net/10356/146778
Title: | Electronic structure of two-dimensional In and Bi metal on BN nanosheets | Authors: | Bo, Maolin Li, Jibiao Yao, Chuang Huang, Zhongkai Li, Lei Sun, Chang Qing Peng, Cheng |
Keywords: | Engineering::Electrical and electronic engineering | Issue Date: | 2019 | Source: | Bo, M., Li, J., Yao, C., Huang, Z., Li, L, Sun, C. Q., & Peng, C. (2019). Electronic structure of two-dimensional In and Bi metal on BN nanosheets. RSC Advances, 9(17), 9342-9347. doi:10.1039/C9RA00673G | Journal: | RSC Advances | Abstract: | The electronic structures of two-dimensional (2D) indium (In) and bismuth (Bi) metal on BN nanosheets are systematically studied using hybrid density functional theory (DFT). We found that 2D In and Bi metal effectively modulate the band gap of a BN nanosheet. We also found that the indirect band gap of the 2D In and Bi metal electronic structures are 0.70 and 0.09 eV, respectively. This modulation originates from the charge transfer between the 2D metal and BN nanosheet interfaces, as well as from the electron redistribution of the In/BN and Bi/BN heterojunctions of the s and p orbitals. Our results provide an insight into 2D In/BN and Bi/BN heterojunctions, which should be useful in the design of 2D In and Bi metal-semiconductor-based devices. | URI: | https://hdl.handle.net/10356/146778 | ISSN: | 2046-2069 | DOI: | 10.1039/C9RA00673G | Rights: | © 2019 The Royal Society of Chemistry. This article is licensed under a Creative Commons Attribution 3.0 Unported License. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Journal Articles |
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Electronic structure of two-dimensional In and Bi metal on BN nanosheets.pdf | 2.8 MB | Adobe PDF | View/Open |
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