Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/146778
Full metadata record
DC FieldValueLanguage
dc.contributor.authorBo, Maolinen_US
dc.contributor.authorLi, Jibiaoen_US
dc.contributor.authorYao, Chuangen_US
dc.contributor.authorHuang, Zhongkaien_US
dc.contributor.authorLi, Leien_US
dc.contributor.authorSun, Chang Qingen_US
dc.contributor.authorPeng, Chengen_US
dc.date.accessioned2021-03-10T07:57:11Z-
dc.date.available2021-03-10T07:57:11Z-
dc.date.issued2019-
dc.identifier.citationBo, M., Li, J., Yao, C., Huang, Z., Li, L, Sun, C. Q., & Peng, C. (2019). Electronic structure of two-dimensional In and Bi metal on BN nanosheets. RSC Advances, 9(17), 9342-9347. doi:10.1039/C9RA00673Gen_US
dc.identifier.issn2046-2069en_US
dc.identifier.urihttps://hdl.handle.net/10356/146778-
dc.description.abstractThe electronic structures of two-dimensional (2D) indium (In) and bismuth (Bi) metal on BN nanosheets are systematically studied using hybrid density functional theory (DFT). We found that 2D In and Bi metal effectively modulate the band gap of a BN nanosheet. We also found that the indirect band gap of the 2D In and Bi metal electronic structures are 0.70 and 0.09 eV, respectively. This modulation originates from the charge transfer between the 2D metal and BN nanosheet interfaces, as well as from the electron redistribution of the In/BN and Bi/BN heterojunctions of the s and p orbitals. Our results provide an insight into 2D In/BN and Bi/BN heterojunctions, which should be useful in the design of 2D In and Bi metal-semiconductor-based devices.en_US
dc.language.isoenen_US
dc.relation.ispartofRSC Advancesen_US
dc.rights© 2019 The Royal Society of Chemistry. This article is licensed under a Creative Commons Attribution 3.0 Unported License.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleElectronic structure of two-dimensional In and Bi metal on BN nanosheetsen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.researchNOVITAS, Nanoelectronics Centre of Excellenceen_US
dc.identifier.doi10.1039/C9RA00673G-
dc.description.versionPublished versionen_US
dc.identifier.scopus2-s2.0-85063507051-
dc.identifier.issue17en_US
dc.identifier.volume9en_US
dc.identifier.spage9342en_US
dc.identifier.epage9347en_US
dc.subject.keywordsBN Nanosheetsen_US
dc.subject.keywordsElectronic Structureen_US
dc.description.acknowledgementThis work was supported by Chongqing Municipal Education Commission (Grant No. KJ1712310).en_US
item.fulltextWith Fulltext-
item.grantfulltextopen-
Appears in Collections:EEE Journal Articles
Files in This Item:
File Description SizeFormat 
Electronic structure of two-dimensional In and Bi metal on BN nanosheets.pdf2.8 MBAdobe PDFView/Open

PublonsTM
Citations 20

3
Updated on Mar 10, 2021

Page view(s)

136
Updated on Jul 5, 2022

Download(s)

7
Updated on Jul 5, 2022

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.