Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/146778
Title: Electronic structure of two-dimensional In and Bi metal on BN nanosheets
Authors: Bo, Maolin
Li, Jibiao
Yao, Chuang
Huang, Zhongkai
Li, Lei
Sun, Chang Qing
Peng, Cheng
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2019
Source: Bo, M., Li, J., Yao, C., Huang, Z., Li, L, Sun, C. Q., & Peng, C. (2019). Electronic structure of two-dimensional In and Bi metal on BN nanosheets. RSC Advances, 9(17), 9342-9347. doi:10.1039/C9RA00673G
Journal: RSC Advances
Abstract: The electronic structures of two-dimensional (2D) indium (In) and bismuth (Bi) metal on BN nanosheets are systematically studied using hybrid density functional theory (DFT). We found that 2D In and Bi metal effectively modulate the band gap of a BN nanosheet. We also found that the indirect band gap of the 2D In and Bi metal electronic structures are 0.70 and 0.09 eV, respectively. This modulation originates from the charge transfer between the 2D metal and BN nanosheet interfaces, as well as from the electron redistribution of the In/BN and Bi/BN heterojunctions of the s and p orbitals. Our results provide an insight into 2D In/BN and Bi/BN heterojunctions, which should be useful in the design of 2D In and Bi metal-semiconductor-based devices.
URI: https://hdl.handle.net/10356/146778
ISSN: 2046-2069
DOI: 10.1039/C9RA00673G
Rights: © 2019 The Royal Society of Chemistry. This article is licensed under a Creative Commons Attribution 3.0 Unported License.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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