Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/146821
Title: Raman scattering investigation of twisted WS2/MoS2 heterostructures : interlayer mechanical coupling versus charge transfer
Authors: Wu, Lishu
Cong, Chunxiao
Shang, Jingzhi
Yang, Weihuang
Chen, Yu
Zhou, Jiadong
Ai, Wei
Wang, Yanlong
Feng, Shun
Zhang, Hongbo
Liu, Zheng
Yu, Ting
Keywords: Science::Physics::Optics and light
Engineering::Materials::Photonics and optoelectronics materials
Issue Date: 2021
Source: Wu, L., Cong, C., Shang, J., Yang, W., Chen, Y., Zhou, J., Ai, W., Wang, Y., Feng, S., Zhang, H., Liu, Z. & Yu, T. (2021). Raman scattering investigation of twisted WS2/MoS2 heterostructures : interlayer mechanical coupling versus charge transfer. Nano Research. https://dx.doi.org/10.1007/s12274-020-3193-y
Project: MOE Tier 1 RG93/19
NRF-CRP-21-2018-0007
MOE2018-T2-2-072
MOE2019-T2-1-004
Journal: Nano Research
Abstract: Twisted van der Waals homo- and hetero-structures have aroused great attentions due to their unique physical properties, providing a new platform to explore the novel two-dimensional (2D) condensed matter physics. The robust dependence of phonon vibrations and electronic band structures on the twist angle has been intensively observed in transition metal dichalcogenide (TMD) homo-structures. However, the effects of twist angle on the lattice vibrational properties in the TMD heterostructures have not caused enough attention. Here, we report the distinct evolutions of Raman scattering and the underlying interlayer interactions in the twisted WS2/MoS2 heterostructures. The shifts and linewidths of E2g(Γ) and A1g(Γ) phonon modes are found to be twist angle dependent. In particular, analogous to that of the twisted TMD homostructures, the frequency separations between E2g(Γ) and A1g(Γ) modes of MoS2 and WS2 in the twisted heterostructures varying with twist angle correlate with the interlayer mechanical coupling, essentially originating from the spacing-related repulsion between sulfur atoms. Moreover, the opposite shift behaviors and broadening of A1g(Γ) modes caused by charge transfer are also observed in the twisted heterostructures. The calculated interlayer distances and band alignment of twisted WS2/MoS2 through density functional theory further evidence our interpretations on the roles of the interlayer mechanical coupling and charge transfer in variations of Raman features. Such understanding and controlling of interlayer interaction through the stacking orientation are significant for future optoelectronic device design based on the newly emerged 2D heterostructures. [Figure not available: see fulltext.]
URI: https://hdl.handle.net/10356/146821
ISSN: 1998-0124
DOI: 10.1007/s12274-020-3193-y
Rights: © 2020 Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature. All rights reserved. This paper was published in Nano Research and is made available with permission of Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature.
Fulltext Permission: embargo_20220121
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

Files in This Item:
File Description SizeFormat 
Raman scattering investigation of twisted WS2MoS2 heterostructures interlayer mechanical coupling versus charge transfer.pdf
  Until 2022-01-21
2.96 MBAdobe PDFUnder embargo until Jan 21, 2022

Page view(s)

134
Updated on Jan 14, 2022

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.