Please use this identifier to cite or link to this item:
|Title:||Brightness enhancement in pulsed-operated perovskite light-emitting transistors||Authors:||Maddalena, Francesco
Chin, Xin Yu
|Keywords:||Science::Physics||Issue Date:||2018||Source:||Maddalena, F., Chin, X. Y., Cortecchia, D., Bruno, A. & Soci, C. (2018). Brightness enhancement in pulsed-operated perovskite light-emitting transistors. ACS Applied Materials and Interfaces, 10(43), 37316-37325. https://dx.doi.org/10.1021/acsami.8b11057||Journal:||ACS Applied Materials and Interfaces||Abstract:||Perovskite light-emitting field-effect transistors (PeLEFETs) provide a versatile device architecture to control transport and electroluminescence properties of hybrid perovskites, enabling injection of high charge carrier density and spatial control of the radiative recombination zone. Ionic screening and organic cation polarization effects typical of metal-halide perovskites, however, critically affect PeLEFET efficiency and reliability. In this work, we demonstrate a new device operation mode based on high-frequency modulation of the applied voltages, which allows significant reduction of ionic drift/screening in methylammonium lead iodide light-emitting transistors. In optimized top contact PeLEFETs, AC operation results in brighter and more uniform electroluminescence compared to DC-driven devices, whereas high-frequency modulation enables electroluminescence emission up to room temperature.||URI:||https://hdl.handle.net/10356/146984||ISSN:||1944-8244||DOI:||10.1021/acsami.8b11057||Rights:||© 2018 American Chemical Society (ACS). All rights reserved.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||SPMS Journal Articles|
Updated on May 26, 2022
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.