Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/146984
Title: Brightness enhancement in pulsed-operated perovskite light-emitting transistors
Authors: Maddalena, Francesco
Chin, Xin Yu
Cortecchia, Daniele
Bruno, Annalisa
Soci, Cesare
Keywords: Science::Physics
Issue Date: 2018
Source: Maddalena, F., Chin, X. Y., Cortecchia, D., Bruno, A. & Soci, C. (2018). Brightness enhancement in pulsed-operated perovskite light-emitting transistors. ACS Applied Materials and Interfaces, 10(43), 37316-37325. https://dx.doi.org/10.1021/acsami.8b11057
Journal: ACS Applied Materials and Interfaces 
Abstract: Perovskite light-emitting field-effect transistors (PeLEFETs) provide a versatile device architecture to control transport and electroluminescence properties of hybrid perovskites, enabling injection of high charge carrier density and spatial control of the radiative recombination zone. Ionic screening and organic cation polarization effects typical of metal-halide perovskites, however, critically affect PeLEFET efficiency and reliability. In this work, we demonstrate a new device operation mode based on high-frequency modulation of the applied voltages, which allows significant reduction of ionic drift/screening in methylammonium lead iodide light-emitting transistors. In optimized top contact PeLEFETs, AC operation results in brighter and more uniform electroluminescence compared to DC-driven devices, whereas high-frequency modulation enables electroluminescence emission up to room temperature.
URI: https://hdl.handle.net/10356/146984
ISSN: 1944-8244
DOI: 10.1021/acsami.8b11057
Rights: © 2018 American Chemical Society (ACS). All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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