Filamentary physics and modelling in redox-based resistive devices

Abstract

As we are moving towards a more data-centric and energy-consuming world, there is an increasingly strong need to search for more efficient alternatives in computing memory. Resistive random access memory (RRAM) has been one of the most promising alternatives to existing memories due to its simple metal-insulator-metal (MIM) structure, high scalability, low power, multi-bit characteristics and compatibility to complementary metal oxide semiconductor (CMOS). An RRAM is made up of two metal electrodes sandwiching a dielectric layer and its switching process is based on basic redox reactions of oxidation and reduction. Recently, there have been studies ranging from the high-k materials such as HfOx to the lesser known lower-k materials such as MgO. This work comprises of conduction mechanism physics, switching dynamics multi-level resistance states, coupled with modelling for a better understanding and prediction analysis studies for future 1T1R industrial applications.