Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/147105
Title: SiN-SOI multilayer platform for prospective applications at 2 μm
Authors: Sia, Brian Jia Xu
Wang, Wanjun
Guo, Xin
Zhou, Jin
Zhang, Zecen
Li, Xiang
Qiao, Zhong Liang
Liu, Chong Yang
Littlejohns, Callum
Reed, Graham T.
Wang, Hong
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2019
Source: Sia, B. J. X., Wang, W., Guo, X., Zhou, J., Zhang, Z., Li, X., Qiao, Z. L., Liu, C. Y., Littlejohns, C., Reed, G. T. & Wang, H. (2019). SiN-SOI multilayer platform for prospective applications at 2 μm. IEEE Photonics Journal, 11(6). https://dx.doi.org/10.1109/JPHOT.2019.2952603
Project: NRF-CRP12-2013-04
Journal: IEEE Photonics Journal
Abstract: Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935 - 1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated.
URI: https://hdl.handle.net/10356/147105
ISSN: 1943-0655
DOI: 10.1109/JPHOT.2019.2952603
Rights: © 2019 IEEE. This journal is 100% open access, which means that all content is freely available without charge to users or their institutions. All articles accepted after 12 June 2019 are published under a CC BY 4.0 license, and the author retains copyright. Users are allowed to read, download, copy, distribute, print, search, or link to the full texts of the articles, or use them for any other lawful purpose, as long as proper attribution is given.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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