Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/147105
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dc.contributor.authorSia, Brian Jia Xuen_US
dc.contributor.authorWang, Wanjunen_US
dc.contributor.authorGuo, Xinen_US
dc.contributor.authorZhou, Jinen_US
dc.contributor.authorZhang, Zecenen_US
dc.contributor.authorLi, Xiangen_US
dc.contributor.authorQiao, Zhong Liangen_US
dc.contributor.authorLiu, Chong Yangen_US
dc.contributor.authorLittlejohns, Callumen_US
dc.contributor.authorReed, Graham T.en_US
dc.contributor.authorWang, Hongen_US
dc.date.accessioned2021-03-26T05:19:10Z-
dc.date.available2021-03-26T05:19:10Z-
dc.date.issued2019-
dc.identifier.citationSia, B. J. X., Wang, W., Guo, X., Zhou, J., Zhang, Z., Li, X., Qiao, Z. L., Liu, C. Y., Littlejohns, C., Reed, G. T. & Wang, H. (2019). SiN-SOI multilayer platform for prospective applications at 2 μm. IEEE Photonics Journal, 11(6). https://dx.doi.org/10.1109/JPHOT.2019.2952603en_US
dc.identifier.issn1943-0655en_US
dc.identifier.other0000-0002-2183-6865-
dc.identifier.other0000-0001-8045-2944-
dc.identifier.other0000-0002-7101-0447-
dc.identifier.urihttps://hdl.handle.net/10356/147105-
dc.description.abstractSilicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935 - 1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated.en_US
dc.description.sponsorshipAgency for Science, Technology and Research (A*STAR)en_US
dc.description.sponsorshipNanyang Technological Universityen_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.language.isoenen_US
dc.relationNRF-CRP12-2013-04en_US
dc.relation.ispartofIEEE Photonics Journalen_US
dc.rights© 2019 IEEE. This journal is 100% open access, which means that all content is freely available without charge to users or their institutions. All articles accepted after 12 June 2019 are published under a CC BY 4.0 license, and the author retains copyright. Users are allowed to read, download, copy, distribute, print, search, or link to the full texts of the articles, or use them for any other lawful purpose, as long as proper attribution is given.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleSiN-SOI multilayer platform for prospective applications at 2 μmen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.researchCentre for Micro-/Nano-electronics (NOVITAS)en_US
dc.contributor.researchSilicon Technologies, Centre of Excellenceen_US
dc.identifier.doi10.1109/JPHOT.2019.2952603-
dc.description.versionPublished versionen_US
dc.identifier.scopus2-s2.0-85077220838-
dc.identifier.issue6en_US
dc.identifier.volume11en_US
dc.subject.keywordsSilicon Photonicsen_US
dc.subject.keywords2 μm Wavebanden_US
dc.description.acknowledgementThis work was supported in part by the National Research Foundation Singapore under Grant NRF-CRP12-2013-04 and in part by Nanyang Technological University-A*Start Silicon Technologies Centre of Excellence and NTUCompoundTek Pte Ltd Research Collaboration Agreement (RCA).en_US
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