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https://hdl.handle.net/10356/147105
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DC Field | Value | Language |
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dc.contributor.author | Sia, Brian Jia Xu | en_US |
dc.contributor.author | Wang, Wanjun | en_US |
dc.contributor.author | Guo, Xin | en_US |
dc.contributor.author | Zhou, Jin | en_US |
dc.contributor.author | Zhang, Zecen | en_US |
dc.contributor.author | Li, Xiang | en_US |
dc.contributor.author | Qiao, Zhong Liang | en_US |
dc.contributor.author | Liu, Chong Yang | en_US |
dc.contributor.author | Littlejohns, Callum | en_US |
dc.contributor.author | Reed, Graham T. | en_US |
dc.contributor.author | Wang, Hong | en_US |
dc.date.accessioned | 2021-03-26T05:19:10Z | - |
dc.date.available | 2021-03-26T05:19:10Z | - |
dc.date.issued | 2019 | - |
dc.identifier.citation | Sia, B. J. X., Wang, W., Guo, X., Zhou, J., Zhang, Z., Li, X., Qiao, Z. L., Liu, C. Y., Littlejohns, C., Reed, G. T. & Wang, H. (2019). SiN-SOI multilayer platform for prospective applications at 2 μm. IEEE Photonics Journal, 11(6). https://dx.doi.org/10.1109/JPHOT.2019.2952603 | en_US |
dc.identifier.issn | 1943-0655 | en_US |
dc.identifier.other | 0000-0002-2183-6865 | - |
dc.identifier.other | 0000-0001-8045-2944 | - |
dc.identifier.other | 0000-0002-7101-0447 | - |
dc.identifier.uri | https://hdl.handle.net/10356/147105 | - |
dc.description.abstract | Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935 - 1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated. | en_US |
dc.description.sponsorship | Agency for Science, Technology and Research (A*STAR) | en_US |
dc.description.sponsorship | Nanyang Technological University | en_US |
dc.description.sponsorship | National Research Foundation (NRF) | en_US |
dc.language.iso | en | en_US |
dc.relation | NRF-CRP12-2013-04 | en_US |
dc.relation.ispartof | IEEE Photonics Journal | en_US |
dc.rights | © 2019 IEEE. This journal is 100% open access, which means that all content is freely available without charge to users or their institutions. All articles accepted after 12 June 2019 are published under a CC BY 4.0 license, and the author retains copyright. Users are allowed to read, download, copy, distribute, print, search, or link to the full texts of the articles, or use them for any other lawful purpose, as long as proper attribution is given. | en_US |
dc.subject | Engineering::Electrical and electronic engineering | en_US |
dc.title | SiN-SOI multilayer platform for prospective applications at 2 μm | en_US |
dc.type | Journal Article | en |
dc.contributor.school | School of Electrical and Electronic Engineering | en_US |
dc.contributor.research | Centre for Micro-/Nano-electronics (NOVITAS) | en_US |
dc.contributor.research | Silicon Technologies, Centre of Excellence | en_US |
dc.identifier.doi | 10.1109/JPHOT.2019.2952603 | - |
dc.description.version | Published version | en_US |
dc.identifier.scopus | 2-s2.0-85077220838 | - |
dc.identifier.issue | 6 | en_US |
dc.identifier.volume | 11 | en_US |
dc.subject.keywords | Silicon Photonics | en_US |
dc.subject.keywords | 2 μm Waveband | en_US |
dc.description.acknowledgement | This work was supported in part by the National Research Foundation Singapore under Grant NRF-CRP12-2013-04 and in part by Nanyang Technological University-A*Start Silicon Technologies Centre of Excellence and NTUCompoundTek Pte Ltd Research Collaboration Agreement (RCA). | en_US |
item.fulltext | With Fulltext | - |
item.grantfulltext | open | - |
Appears in Collections: | EEE Journal Articles |
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File | Description | Size | Format | |
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08894868.pdf | 3.79 MB | Adobe PDF | View/Open |
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