Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/147326
Title: Formation of 45◦ silicon (110) surface using Triton X-n surfactants in potassium hydroxide for infrared applications
Authors: Goh, Simon Chun Kiat
Guo, Tina Xin
Chuan, KaiLiang
Tan, Chuan Seng
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Goh, S. C. K., Guo, T. X., Chuan, K. & Tan, C. S. (2018). Formation of 45◦ silicon (110) surface using Triton X-n surfactants in potassium hydroxide for infrared applications. ECS Journal of Solid State Science and Technology, 7(12), Q259-Q266. https://dx.doi.org/10.1149/2.0141812jss
Journal: ECS Journal of Solid State Science and Technology
Abstract: Silicon (Si) micromirrors are an integral feature for many micro-optomechanical systems (MOEMS). Such mirrors are generally wet etched in alkaline solution at elevated temperature. For 90 beam steering applications, 45 slanted Si (110) plane is the prime choice fabricated with the incorporation of tensioactive surfactants. Here, Triton-Si and Triton-hydroxide (OH )/H O interaction using varying hydrophilic chain length Triton (X-45, X-100 and X-405) were investigated. The surfactant concentration was varied from 0 to 1000 ppm in potassium hydroxide (KOH). Triton molecules were shown to adsorb preferentially on (110) than on (100) surface. Longer chain length Triton hampered OH access to Si surface resulting in slower etch rate. In contrast, contact angle measurement suggested that shorter Triton interfaced better with Si surface. Later, Si wafers etched in Triton 10 ppm - KOH were examined. The measured output for (110)X-45, (110)X-100, (110) and polished Si wafer reference (R < 5Å) mirrors were 0.58, 0.76, 0.72 and 1.25 mW, respectively. Subsequently, Si-SiO thin film in [HLHL] -substrate configuration was fabricated. Broadband micromirror for use in 3.0-5.5 μm spectrum range was experimentally realized with reflected efficiency of 73%.
URI: https://hdl.handle.net/10356/147326
ISSN: 2162-8769
DOI: 10.1149/2.0141812jss
Rights: © The Electrochemical Society, Inc. 2018. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Journal of Solid State Science and Technology, 7(12), Q259-Q266.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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