Analysis of compact silicon photonic hybrid ring external cavity (SHREC) wavelength-tunable laser diodes operating from 1881–1947 nm

Abstract

The "2 mu m waveband", specifically the 1.9 mu m wavelength region, is playing an increasingly imperative role in photonics. Development into compact tunable light sources operating at the wavelength region can unlock numerous technological applications. Instances, while not exhaustive, include alleviating the capacity load in fiber communications, H2O spectroscopy, optical logic, signal processing as well as enabling the optical Kerr effect on silicon. Silicon photonics is a disruptive technology. Through mature silicon processing, recent developments suggest that silicon will emerge as the workhorse of integrated optics. While the realization of a monolithic light source has proved to be challenging, the hybrid/heterogenous Si platforms, consisting of silicon and III-V materials, has stepped to the fore. In this work, we present the study of Vernier-based hybrid silicon photonic wavelength-tunable lasers with an operating range of 1881-1947 nm (66 nm), subject to different coupling gaps (Gapmrr) between the silicon microring resonators (MRRs) and bus waveguide. Wavelength tuning functionality is enabled via the thermo-optic effect of MRRs. Gapmrr, being the smallest feature in the assemble, is highly influential to the characteristics of the SHREC. As such, trends in hybrid laser performance with respect to Gapmrr are measured and analyzed. Slope efficiency, laser output power and side-mode suppression ratio of 0.232 W/A, 28 mW and 42 dB respectively are obtained across the developed lasers. Through the design of the Vernier spectrum and Gapmrr, tuning of laser wavelength from 1881-1947 nm can be achieved by applying only 47.2 mW of thermal power to a single MRR.