Please use this identifier to cite or link to this item:
Title: 1 × N (N = 2, 8) Silicon selector switch for prospective technologies at the 2 μm waveband
Authors: Sia, Brian Jia Xu
Li, Xiang
Qiao, Zhongliang
Guo, Xin
Zhou, Jin
Littlejohns, Callum G.
Liu, Chongyang
Reed, Graham T.
Wang, Wanjun
Wang, Hong
Keywords: Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2020
Source: Sia, B. J. X., Li, X., Qiao, Z., Guo, X., Zhou, J., Littlejohns, C. G., Liu, C., Reed, G. T., Wang, W. & Wang, H. (2020). 1 × N (N = 2, 8) Silicon selector switch for prospective technologies at the 2 μm waveband. IEEE Photonics Technology Letters, 32(18), 1127-1130.
Journal: IEEE Photonics Technology Letters
Abstract: The 2 μm waveband, specifically near 1.9 μm, is an imperative resource that could possibly be exploited in future communications systems. This is due to the promising infrastructural developments at the wavelength region (hollow-core photonic bandgap fiber, thulium-doped fiber amplifier) near 1.9 μm. In this work, we report the 1 × N selector switch based on Mach-Zehnder interferometers operating near the 1.9 μm wavelength region. As an elementary cell (N = 2), an insertion loss as low as 1.1 dB, P π of 23 mW, 10-90% switching time of lower than 38 μs and a crosstalk of lower than -25 dB from 1880 to 1955 nm has been determined. In order to prove scalability, the 1 × 8 switch (N = 8) is demonstrated, indicating crosstalk as low as -21 dB, considering all possible switching configurations across the abovementioned wavelength region. Insertion loss levels are examined.
ISSN: 1041-1135
DOI: 10.1109/LPT.2020.3014204
Rights: © 2020 Institute of Electrical and Electronics Engineers (IEEE). All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:TL Journal Articles

Page view(s)

Updated on Jul 26, 2021

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.