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|Title:||1 × N (N = 2, 8) Silicon selector switch for prospective technologies at the 2 μm waveband||Authors:||Sia, Brian Jia Xu
Littlejohns, Callum G.
Reed, Graham T.
|Keywords:||Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics||Issue Date:||2020||Source:||Sia, B. J. X., Li, X., Qiao, Z., Guo, X., Zhou, J., Littlejohns, C. G., Liu, C., Reed, G. T., Wang, W. & Wang, H. (2020). 1 × N (N = 2, 8) Silicon selector switch for prospective technologies at the 2 μm waveband. IEEE Photonics Technology Letters, 32(18), 1127-1130. https://dx.doi.org/10.1109/LPT.2020.3014204||Journal:||IEEE Photonics Technology Letters||Abstract:||The 2 μm waveband, specifically near 1.9 μm, is an imperative resource that could possibly be exploited in future communications systems. This is due to the promising infrastructural developments at the wavelength region (hollow-core photonic bandgap fiber, thulium-doped fiber amplifier) near 1.9 μm. In this work, we report the 1 × N selector switch based on Mach-Zehnder interferometers operating near the 1.9 μm wavelength region. As an elementary cell (N = 2), an insertion loss as low as 1.1 dB, P π of 23 mW, 10-90% switching time of lower than 38 μs and a crosstalk of lower than -25 dB from 1880 to 1955 nm has been determined. In order to prove scalability, the 1 × 8 switch (N = 8) is demonstrated, indicating crosstalk as low as -21 dB, considering all possible switching configurations across the abovementioned wavelength region. Insertion loss levels are examined.||URI:||https://hdl.handle.net/10356/147469||ISSN:||1041-1135||DOI:||10.1109/LPT.2020.3014204||Rights:||© 2020 Institute of Electrical and Electronics Engineers (IEEE). All rights reserved.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||TL Journal Articles|
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