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Title: Compact silicon photonic hybrid ring external cavity (SHREC)/InGaSb-AlGaAsSb wavelength-tunable laser diode operating from 1881-1947 nm
Authors: Sia, Brian Jia Xu
Wang, Wanjun
Qiao, Zhongliang
Li, Xiang
Guo, Xin
Zhou, Jin
Littlejohns, Callum G.
Zhang, Zecen
Liu, Chongyang
Reed, Graham T.
Wang, Hong
Keywords: Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2020
Source: Sia, B. J. X., Wang, W., Qiao, Z., Li, X., Guo, X., Zhou, J., Littlejohns, C. G., Zhang, Z., Liu, C., Reed, G. T. & Wang, H. (2020). Compact silicon photonic hybrid ring external cavity (SHREC)/InGaSb-AlGaAsSb wavelength-tunable laser diode operating from 1881-1947 nm. Optics Express, 28(4), 5134-5146.
Journal: Optics express 
Abstract: In recent years, the 2 µm waveband has been gaining significant attention due to its potential in the realization of several key technologies, specifically, future long-haul optical communications near the 1.9 µm wavelength region. In this work, we present a hybrid silicon photonic wavelength-tunable diode laser with an operating range of 1881-1947 nm (66 nm) for the first time, providing good compatibility with the hollow-core photonic bandgap fiber and thulium-doped fiber amplifier. Room-temperature continuous-wave operation was achieved with a favorable on-chip output power of 28 mW. Stable single-mode lasing was observed with side-mode suppression ratio up to 35 dB. Besides the abovementioned potential applications, the demonstrated wavelength region will find critical purpose in H2O spectroscopic sensing, optical logic, signal processing as well as enabling the strong optical Kerr effect on Si.
ISSN: 1094-4087
DOI: 10.1364/OE.383524
Rights: © 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:TL Journal Articles

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