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|Title:||High-performance 1.06-μm InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers||Authors:||Qiao, Zhongliang
|Keywords:||Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics||Issue Date:||2019||Source:||Qiao, Z., Li, X., Wang, H., Li, T., Gao, X., Qu, Y., Bo, B. & Liu, C. (2019). High-performance 1.06-μm InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers. Semiconductor Science and Technology, 34(5), 055013-. https://dx.doi.org/10.1088/1361-6641/ab110b||Journal:||Semiconductor Science and Technology||Abstract:||High-performance 1.06-μm InGaAs/GaAs double-quantum-well (DQW) asymmetric herero- structure semiconductor lasers have been designed, fabricated and characterized. The laser structure, grown by metal-organic chemical vapor deposition (MOCVD), mainly consists of compositionally graded p-Al Ga As upper cladding layers, a p-Al Ga As upper waveguide layer, a 1.06-μm InGaAs/GaAs DQW active region, an un-doped In Ga As P lower waveguide layer, and compositionally graded n-doped In Ga As P lower cladding layers. Measurement results of the as-cleaved ridge waveguide (RWG) lasers with a contact ridge width of 25 μm and different cavity lengths (900 to 2765 μm) demonstrated state-of-the-art performances with a high internal quantum efficiency (η ) of ∼98.4% and a low internal optical loss (α ) of ∼1.01 cm at 20 °C. The laser has demonstrated high characteristic temperatures of 245 K (T ) and 663 K (T ) from 20 to 50 °C, and the cavity length dependent behaviour of T and T has also been investigated from 20 to 80 °C. Furthermore, a low transparency current density (J ) of 77 A/cm /QW in this laser structure is obtained at 20 °C, which is among one of the lowest values reported so far for 1.06-μm InGaAs/GaAs semiconductor lasers.||URI:||https://hdl.handle.net/10356/147474||ISSN:||0268-1242||DOI:||10.1088/1361-6641/ab110b||Rights:||© 2019 IOP Publishing Ltd (Institute of Physics). All rights reserved.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||TL Journal Articles|
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