Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/147482
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dc.contributor.authorLi, Xiangen_US
dc.contributor.authorWang, Hongen_US
dc.contributor.authorQiao, Zhongliangen_US
dc.contributor.authorZhang, Yuen_US
dc.contributor.authorNiu, Zhichuanen_US
dc.contributor.authorTong, Cunzhuen_US
dc.contributor.authorLiu, Chongyangen_US
dc.date.accessioned2021-04-06T08:14:18Z-
dc.date.available2021-04-06T08:14:18Z-
dc.date.issued2016-
dc.identifier.citationLi, X., Wang, H., Qiao, Z., Zhang, Y., Niu, Z., Tong, C. & Liu, C. (2016). Design and analysis of 2-μm InGaSb/GaSb quantum well lasers integrated onto silicon-on-insulator (SOI) waveguide circuits through an Al2O3 bonding layer. IEEE Journal of Selected Topics in Quantum Electronics, 22(6), 16-22. https://dx.doi.org/10.1109/JSTQE.2016.2553448en_US
dc.identifier.issn1077-260Xen_US
dc.identifier.other0000-0001-8045-2944-
dc.identifier.urihttps://hdl.handle.net/10356/147482-
dc.description.abstractGaSb-based quantum well (QW) laser diode, with emission wavelength ~2 μm, integrated onto a silicon-on-insulator (SOI) waveguide circuit through a high-thermal-conductivity Al 2 O 3 bonding layer has been designed and analyzed. Prior to bonding, the fabricated Fabry-Perot GaSb QW laser worked under continuous wave operation at room temperature, with a low threshold current of 37 mA at the emission wavelength of 2019 nm, demonstrating high material quality. A tapered structure has been used for evanescent coupling of light from the GaSb laser to the underlying Si waveguide. Instead of using SiO 2 for direct bonding or Benzocyclobutene for adhesive bonding, the use of Al 2 O 3 to directly bond GaSb lasers onto SOI wafers is proposed. The optical mode distribution simulations by a beam propagation method software show that light can be coupled efficiently to the underlying Si waveguide through the tapered structure without compromise in optical coupling efficiency. Furthermore, there is a significant reduction (~70%) in the total thermal resistance compared with the same structure using a SiO 2 bonding layer. Our results suggest that the Al 2 O 3 bonding layer could be a promising candidate for III-V lasers integrated on SOI circuits, where thermal dissipation is very critical.en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.language.isoenen_US
dc.relation.ispartofIEEE Journal of Selected Topics in Quantum Electronicsen_US
dc.rights© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/JSTQE.2016.2553448en_US
dc.subjectEngineering::Electrical and electronic engineering::Optics, optoelectronics, photonicsen_US
dc.titleDesign and analysis of 2-μm InGaSb/GaSb quantum well lasers integrated onto silicon-on-insulator (SOI) waveguide circuits through an Al2O3 bonding layeren_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.researchTemasek Laboratories @ NTUen_US
dc.identifier.doi10.1109/JSTQE.2016.2553448-
dc.description.versionAccepted versionen_US
dc.identifier.scopus2-s2.0-84980398325-
dc.identifier.issue6en_US
dc.identifier.volume22en_US
dc.identifier.spage16en_US
dc.identifier.epage22en_US
dc.subject.keywordsBondingen_US
dc.subject.keywordsAluminum Oxideen_US
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