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Title: Design and analysis of 2-μm InGaSb/GaSb quantum well lasers integrated onto silicon-on-insulator (SOI) waveguide circuits through an Al2O3 bonding layer
Authors: Li, Xiang
Wang, Hong
Qiao, Zhongliang
Zhang, Yu
Niu, Zhichuan
Tong, Cunzhu
Liu, Chongyang
Keywords: Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2016
Source: Li, X., Wang, H., Qiao, Z., Zhang, Y., Niu, Z., Tong, C. & Liu, C. (2016). Design and analysis of 2-μm InGaSb/GaSb quantum well lasers integrated onto silicon-on-insulator (SOI) waveguide circuits through an Al2O3 bonding layer. IEEE Journal of Selected Topics in Quantum Electronics, 22(6), 16-22.
Journal: IEEE Journal of Selected Topics in Quantum Electronics 
Abstract: GaSb-based quantum well (QW) laser diode, with emission wavelength ~2 μm, integrated onto a silicon-on-insulator (SOI) waveguide circuit through a high-thermal-conductivity Al 2 O 3 bonding layer has been designed and analyzed. Prior to bonding, the fabricated Fabry-Perot GaSb QW laser worked under continuous wave operation at room temperature, with a low threshold current of 37 mA at the emission wavelength of 2019 nm, demonstrating high material quality. A tapered structure has been used for evanescent coupling of light from the GaSb laser to the underlying Si waveguide. Instead of using SiO 2 for direct bonding or Benzocyclobutene for adhesive bonding, the use of Al 2 O 3 to directly bond GaSb lasers onto SOI wafers is proposed. The optical mode distribution simulations by a beam propagation method software show that light can be coupled efficiently to the underlying Si waveguide through the tapered structure without compromise in optical coupling efficiency. Furthermore, there is a significant reduction (~70%) in the total thermal resistance compared with the same structure using a SiO 2 bonding layer. Our results suggest that the Al 2 O 3 bonding layer could be a promising candidate for III-V lasers integrated on SOI circuits, where thermal dissipation is very critical.
ISSN: 1077-260X
DOI: 10.1109/JSTQE.2016.2553448
Rights: © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at:
Fulltext Permission: open
Fulltext Availability: With Fulltext
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