Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/147836
Title: Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm
Authors: Wu, Shaoteng
Son, Bongkwon
Zhang, Lin
Chen, Qimiao
Zhou, Hao
Goh, Simon Chun Kiat
Tan, Chuan Seng
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2021
Source: Wu, S., Son, B., Zhang, L., Chen, Q., Zhou, H., Goh, S. C. K. & Tan, C. S. (2021). Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm. Journal of Alloys and Compounds, 872, 159696-. https://dx.doi.org/10.1016/j.jallcom.2021.159696
Project: NRF–CRP19–2017–01 and 2019-T1-002-040 
Journal: Journal of Alloys and Compounds 
Abstract: Here, we explore the thermal stability of GeSn epilayers with varying Sn contents (3-10%) at an annealing temperature ranging from 300 to 750°C. It is found that ordered nanopatterns are formed on the surface of GeSn with Sn content of 8% without excessive Sn precipitation after thermal annealing at 700°C. Despite being annealed at high temperatures, the GeSn maintains its crystal structure, which is confirmed by the X-ray Diffraction (XRD), Raman spectrum, and secondary-ion mass spectrometry (SIMS). The corresponding photocurrents of the photodetectors at the wavelength of 2 µm also indicate the crystal quality of the GeSn alloys does not deteriorate significantly after high-temperature annealing (675-700°C). Meanwhile, the decrease of dark current with the enhancement of Ip/Id ratio (on-off ratio) indicates the improvement of detectivity of the photodetector due to the annealing process. Furthermore, the annealing temperature is optimized to 550°C to achieve 200% enhancement of photocurrents of the GeSn photodetectors operated at 2 µm.
URI: https://hdl.handle.net/10356/147836
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2021.159696
Rights: © 2021 Elsevier B.V. All rights reserved. This paper was published in Journal of Alloys and Compounds and is made available with permission of Elsevier B.V.
Fulltext Permission: embargo_20230815
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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  Until 2023-08-15
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