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Title: Robust room temperature valley Hall effect of interlayer excitons
Authors: Huang, Zumeng
Liu, Yuanda
Dini, Kévin
Tan, Qinghai
Liu, Zhuojun
Fang, Hanlin
Liu, Jin
Liew, Timothy
Gao, Weibo
Keywords: Science::Physics::Optics and light
Issue Date: 2020
Source: Huang, Z., Liu, Y., Dini, K., Tan, Q., Liu, Z., Fang, H., Liu, J., Liew, T. & Gao, W. (2020). Robust room temperature valley Hall effect of interlayer excitons. Nano Letters, 20(2), 1345-1351.
Project: NRF-NRFF2015-03
MOE2016-T3-1-006 (S)
Journal: Nano Letters 
Abstract: The Berry curvature in the band structure of transition metal dichalcogenides (TMDs) introduces a valley-dependent effective magnetic field, which induces the valley Hall effect (VHE). Similar to the ordinary Hall effect, the VHE spatially separates carriers or excitons, depending on their valley index, and accumulates them at opposite sample edges. The VHE can play a key role in valleytronic devices, but previous observations of the VHE have been limited to cryogenic temperatures. Here, we report a demonstration of the VHE of interlayer excitons in a MoS2/WSe2 heterostructure at room temperature. We monitored the in-plane propagation of interlayer excitons through photoluminescence mapping and observed their spatial separation into two opposite transverse directions that depended on the valley index of the excitons. Our theoretical simulations reproduced the salient features of these observations. Our demonstration of the robust interlayer exciton VHE at room temperature, enabled by their intrinsically long lifetimes, will open up realistic possibilities for the development of opto-valleytronic devices based on TMD heterostructures.
ISSN: 1530-6984
DOI: 10.1021/acs.nanolett.9b04836
DOI (Related Dataset): 10.21979/N9/Q9MC8W
Schools: School of Physical and Mathematical Sciences 
Departments: Physics and Applied Physics
Research Centres: The Photonics Institute 
Centre for Disruptive Photonic Technologies (CDPT) 
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see
Fulltext Permission: open
Fulltext Availability: With Fulltext
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