Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/148250
Title: Design and development of single-qubit ion trap on glass and Si substrates with RF analysis and performance benchmarking
Authors: Apriyana, Anak Agung Alit
Li, Hong Yu
Zhao, Peng
Tao, Jing
Lim, Yu Dian
Lin, Ye
Guidoni, Luca
Tan, Chuan Seng
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2020
Source: Apriyana, A. A. A., Li, H. Y., Zhao, P., Tao, J., Lim, Y. D., Lin, Y., Guidoni, L. & Tan, C. S. (2020). Design and development of single-qubit ion trap on glass and Si substrates with RF analysis and performance benchmarking. IEEE Transactions On Components, Packaging and Manufacturing Technology, 10(7), 1221-1231. https://dx.doi.org/10.1109/TCPMT.2020.2995388
Project: A1685b0005
Journal: IEEE Transactions on Components, Packaging and Manufacturing Technology
Abstract: This article presents the design and development of surface electrode ion traps on glass and Si substrates and their radio frequency (RF) characterizations and performance benchmarking. In this case, the ion trap on glass shows superior performances in all necessary criteria. In terms of RF characterizations, ion traps on glass have a {Q} factor of greater than 900. This is significantly higher than the {Q} factor of its silicon counterparts, which are around 20-300. Such a high {Q} factor results in power spectral density (PSD) of greater than 10 W/MHz. On the other hand, ion traps on silicon produce PSD values of lower than 3 W/MHz. In terms of RF performance, the ion trap on glass shows insertion loss lower than 0.2 dB at 60 MHz. This is more superior to insertion loss values of ion traps on silicon, which are around 1-4 dB. The ion-traps metallization is developed using three metallization layers (0.1- mu text{m} Ti barrier layer, 2.5-3.7- mu text{m} Cu, and 0.3- mu text{m} Au) on top of the dielectric. The on-chip resonance condition can be maintained upon packaging integration. The laser optical setup for ion trapping is verified to capture a single 88Sr+ ion.
URI: https://hdl.handle.net/10356/148250
ISSN: 2156-3985
DOI: 10.1109/TCPMT.2020.2995388
Schools: School of Electrical and Electronic Engineering 
Rights: © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/TCPMT.2020.2995388
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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