Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/148303
Title: Direct laser patterning of a 2D WSe2 logic circuit
Authors: Zhu, Chao
Zhao, Xiaoxu
Wang, Xiaowei
Chen, Jieqiong
Yu, Peng
Liu, Song
Zhou, Jiadong
Fu, Qundong
Zeng, Qingsheng
He, Yongmin
Edgar, James H.
Pennycook, Stephen J.
Liu, Fucai
Liu, Zheng
Keywords: Engineering::Materials::Microelectronics and semiconductor materials
Issue Date: 2021
Source: Zhu, C., Zhao, X., Wang, X., Chen, J., Yu, P., Liu, S., Zhou, J., Fu, Q., Zeng, Q., He, Y., Edgar, J. H., Pennycook, S. J., Liu, F. & Liu, Z. (2021). Direct laser patterning of a 2D WSe2 logic circuit. Advanced Functional Materials. https://dx.doi.org/10.1002/adfm.202009549
Project: NRF‐CRP21‐2018‐0007
NRF‐CRP22‐2019‐0007
MOE2016‐T2‐1‐131
MOE2018‐T3‐1‐002
MOE Tier 1 (RG4/17)
MOE Tier 1 (RG7/18)
MOE2017‐T2‐2‐139
Applied Basic Research Program of Sichuan Province. Grant Number: 2020ZYD014
US National Science Foundation. Grant Number: 1538127
A*STAR A2083c0052
Journal: Advanced Functional Materials 
Abstract: Carrier doping is the basis of the modern semiconductor industry. Great efforts are put into the control of carrier doping for 2D semiconductors, especially the layered transition metal dichalcogenides. Here, the direct laser patterning of WSe2 devices via light‐induced hole doping is systematically studied. By changing the laser power, scan speed, and the number of irradiation times, different levels of hole doping can be achieved in the pristine electron‐transport‐dominated WSe2, without obvious sample thinning. Scanning transmission electron microscopy characterization reveals that the oxidation of the laser‐radiated WSe2 is the origin of the carrier doping. Photocurrent mapping shows that after the same amount of laser irradiation, with increasing thickness, the laser patterned PN junction changes from the pure lateral to the vertical‐lateral hybrid structure, accompanied by the decrease in the open circuit voltage. The vertical‐lateral hybrid PN junction can be tuned to a pure lateral one by further irradiation, showing possibilities to construct complex junction profiles. Moreover, a NOR gate circuit is demonstrated by direct patterning of p‐doped channels using laser irradiation without introducing passive layers and metal electrodes with different work functions. This method simplifies device fabrication procedures and shows a promising future in large scale logic circuit applications.
URI: https://hdl.handle.net/10356/148303
ISSN: 1616-3028
DOI: 10.1002/adfm.202009549
Rights: This is the accepted version of the following article: Zhu, C., Zhao, X., Wang, X., Chen, J., Yu, P., Liu, S., Zhou, J., Fu, Q., Zeng, Q., He, Y., Edgar, J. H., Pennycook, S. J., Liu, F. & Liu, Z. (2021). Direct laser patterning of a 2D WSe2 logic circuit. Advanced Functional Materials. https://dx.doi.org/10.1002/adfm.202009549, which has been published in final form at https://doi.org/10.1002/adfm.202009549. This article may be used for non-commercial purposes in accordance with the Wiley Self-Archiving Policy [https://authorservices.wiley.com/authorresources/Journal-Authors/licensing/self-archiving.html].
Fulltext Permission: embargo_20220312
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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  Until 2022-03-12
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