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Title: Achieving high thermoelectric quality factor toward high figure of merit in GeTe
Authors: Ady Suwardi
Cao, Jing
Zhao, Yunshan
Wu, Jing
Chien, Sheau Wei
Tan, Xian Yi
Hu, Lei
Wang, Xizu
Wang, Weide
Li, Dengfeng
Yin, Yan
Zhou, Wu-Xing
Repaka, D. V. Maheswar
Chen, Jingsheng
Zheng, Yun
Yan, Qingyu
Zhang, Gang
Xu, Jianwei
Keywords: Engineering::Materials::Functional materials
Issue Date: 2020
Source: Ady Suwardi, Cao, J., Zhao, Y., Wu, J., Chien, S. W., Tan, X. Y., Hu, L., Wang, X., Wang, W., Li, D., Yin, Y., Zhou, W., Repaka, D. V. M., Chen, J., Zheng, Y., Yan, Q., Zhang, G. & Xu, J. (2020). Achieving high thermoelectric quality factor toward high figure of merit in GeTe. Materials Today Physics, 14, 100239-.
Journal: Materials Today Physics
Abstract: In recent years, GeTe has received tremendous attention from the research community due to its favorable electronic and thermal properties which make it one of the best performing thermoelectric compounds. In many reports, high performance has often been achieved via various doping/alloying methods, which typically involve more than one type of dopants. In contrast to the widely used co-doping strategies, this work only uses a minute amount of 1% doping, giving rise to one of the highest quality factor (1.30) at 673 K amongst GeTe, with a corresponding zT of 1.5. The high performance is attributed to simultaneously improved electronic properties via carrier concentration optimization as well as reduced thermal conductivity via additional phonon scattering brought about by In-mass fluctuations. More importantly, we elucidate on the importance of preserving the high quality factor via choosing the right dopants to optimize the carrier concentration. Furthermore, we showed that the strategy of evaluating the quality factor can be applied to other material systems, serving as a general guideline for thermoelectric materials design. The quality factor of GeTe in this work is superior to most other high-performing chalcogenides such as PbTe, SnTe, and SnS, revealing the large space for further enhancing its zT.
ISSN: 2542-5293
DOI: 10.1016/j.mtphys.2020.100239
Rights: © 2021 Elsevier B.V. All rights reserved. This paper was published in Materials Today Physics and is made available with permission of Elsevier B.V.
Fulltext Permission: embargo_20220831
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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