Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/148580
Title: Epitaxial synthesis of monolayer PtSe2 single crystal on MoSe2 with strong interlayer coupling
Authors: Zhou, Jiadong
Kong, Xianghua
Sekhar, M. Chandra
Lin, Junhao
Le Goualher, Frederic
Xu, Rui
Wang, Xiaowei
Chen, Yu
Zhou, Yao
Zhu, Chao
Lu, Wei
Liu, Fucai
Tang, Bijun
Guo, Zenglong
Zhu, Chao
Cheng, Zhihai
Yu, Ting
Suenaga, Kazu
Sun, Dong
Ji, Wei
Liu, Zheng
Keywords: Science
Issue Date: 2019
Source: Zhou, J., Kong, X., Sekhar, M. C., Lin, J., Le Goualher, F., Xu, R., Wang, X., Chen, Y., Zhou, Y., Zhu, C., Lu, W., Liu, F., Tang, B., Guo, Z., Zhu, C., Cheng, Z., Yu, T., Suenaga, K., Sun, D., ...Liu, Z. (2019). Epitaxial synthesis of monolayer PtSe2 single crystal on MoSe2 with strong interlayer coupling. ACS Nano, 13(10), 10929-10938. https://dx.doi.org/10.1021/acsnano.8b09479
Journal: ACS Nano
Abstract: PtSe2, a layered two-dimensional transition-metal dichalcogenide (TMD), has drawn intensive attention owing to its layer-dependent band structure, high air stability, and spin-layer locking effect which can be used in various applications for next-generation optoelectronic and electronic devices or catalysis applications. However, synthesis of PtSe2 is highly challenging due to the low chemical reactivity of Pt sources. Here, we report the chemical vapor deposition of monolayer PtSe2 single crystals on MoSe2. The periodic Moiré patterns from the vertically stacked heterostructure (PtSe2/MoSe2) are clearly identified via annular dark-field scanning transmission electron microscopy. First-principles calculations show a type II band alignment and reveal interface states originating from the strong-weak interlayer coupling (SWIC) between PtSe2 and MoSe2 monolayers, which is supported by the electrostatic force microscopy imaging. Ultrafast hole transfer between PtSe2 and MoSe2 monolayers is observed in the PtSe2/MoSe2 heterostructure, matching well with the theoretical results. Our study will shed light on the synthesis of Pt-based TMD heterostructures and boost the realization of SWIC-based optoelectronic devices.
URI: https://hdl.handle.net/10356/148580
ISSN: 2574-0970
DOI: 10.1021/acsnano.8b09479
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsnano.8b09479
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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