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Title: Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate
Authors: Whiteside, Matthew
Arulkumaran, Subramaniam
Dikme, Yilmaz
Sandupatla, Abhinay
Ng, Geok Ing
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2020
Source: Whiteside, M., Arulkumaran, S., Dikme, Y., Sandupatla, A. & Ng, G. I. (2020). Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate. Electronics, 9(11).
Journal: Electronics
Abstract: AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMT) with a low-temperature epitaxy (LTE)-grown single crystalline AlN gate dielectric were demonstrated for the first time and the post-gate annealing effects at 400 °C were studied. The as-deposited LTE-AlN MISHEMT showed a maximum drain current (I Dmax) of 708 mA/mm at a gate bias of 4 V and a maximum extrinsic transconductance (g mmax) of 129 mS/mm. The 400 °C annealed MISHEMT exhibited an increase of 15% in g mmax, an order of magnitude reduction in reverse gate leakage and about a 3% suppression of drain current (I D) collapse. The increase of g mmax by post-gate annealing is consistent with the increase of 2DEG mobility. The suppression of I D collapse and the reduction of gate leakage current is attributed to the reduction of interface state density (5.0 × 10¹¹ cm⁻²eV⁻¹) between the AlN/GaN interface after post-gate annealing at 400 °C. This study demonstrates that LTE grown AlN is a promising alternate material as gate dielectric for GaN-based MISHEMT application.
ISSN: 2079-9292
DOI: 10.3390/electronics9111858
Rights: © 2020 The Author(s). Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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