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Title: Tailoring magnetic order via atomically stacking 3d/5d electrons to achieve high-performance spintronic devices
Authors: Huang, Ke
Wu, Liang
Wang, Maoyu
Swain, Nyayabanta
Motapothula, M.
Luo, Yongzheng
Han, Kun
Chen, Mingfeng
Ye, Chen
Yang, Allen Jian
Xu, Huan
Qi, Dong-chen
N'Diaye, Alpha T.
Panagopoulos, Christos
Primetzhofer, Daniel
Shen, Lei
Sengupta, Pinaki
Ma, Jing
Feng, Zhenxing
Nan, Ce-Wen
Wang, Renshaw Xiao
Keywords: Science::Physics
Issue Date: 2020
Source: Huang, K., Wu, L., Wang, M., Swain, N., Motapothula, M., Luo, Y., Han, K., Chen, M., Ye, C., Yang, A. J., Xu, H., Qi, D., N'Diaye, A. T., Panagopoulos, C., Primetzhofer, D., Shen, L., Sengupta, P., Ma, J., Feng, Z., ...Wang, R. X. (2020). Tailoring magnetic order via atomically stacking 3d/5d electrons to achieve high-performance spintronic devices. Applied Physics Reviews, 7(1).
Project: RG108/17
Journal: Applied Physics Reviews
Abstract: The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such as the introduction of spin-correlated interfacial coupling, to tailor magnetic orders and achieve novel magnetic properties. We chose a unique polar–nonpolar LaMnO3/SrIrO3 superlattice because Mn (3d)/Ir (5d) oxides exhibit rich magnetic behaviors and strong spin–orbit coupling through the entanglement of their 3d and 5d electrons. Through magnetization and magnetotransport measurements, we found that the magnetic order is interface-dominated as the superlattice period is decreased. We were able to then effectively modify the magnetization, tilt of the ferromagnetic easy axis, and symmetry transition of the anisotropic magnetoresistance of the LaMnO3/SrIrO3 superlattice by introducing additional Mn (3d) and Ir (5d) interfaces. Further investigations using in-depth first-principles calculations and numerical simulations revealed that these magnetic behaviors could be understood by the 3d/5d electron correlation and Rashba spin–orbit coupling. The results reported here demonstrate a new route to synchronously engineer magnetic properties through the atomic stacking of different electrons, which would contribute to future applications in high-capacity storage devices and advanced computing.
ISSN: 1931-9401
DOI: 10.1063/1.5124373
Rights: © 2020 The Author(s). All rights reserved. This paper was published by American Institute of Physics (AIP) in Applied Physics Reviews and is made available with permission of The Author(s).
Fulltext Permission: open
Fulltext Availability: With Fulltext
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