Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/149059
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dc.contributor.authorKok, Ignatius Jin Yanen_US
dc.date.accessioned2021-05-25T05:08:42Z-
dc.date.available2021-05-25T05:08:42Z-
dc.date.issued2021-
dc.identifier.citationKok, I. J. Y. (2021). Hot carrier degradation of extended drain N-channel metal-oxide-semiconductor. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/149059en_US
dc.identifier.urihttps://hdl.handle.net/10356/149059-
dc.description.abstractThe objective of the project targets the understanding of how the Extended Drain Metal Oxide Semiconductor (EDMOS) operates under a variety of stressing conditions. The EDMOS is seen as a potential successor to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETS) used in power amplifiers, particularly those used in telecommunication systems. EDMOS of different sizes were used to understand the impact of Hot Carrier Stress on the device due to a myriad of factors. Different methodologies used in Integrated Circuit (IC) reliability testing, not limited to the comparison of MOSFET transfer characteristics and Parasitic Capacitance measurement, have been used to study the long-terms effects of stress on the EDMOS under accelerated conditions.en_US
dc.language.isoenen_US
dc.publisherNanyang Technological Universityen_US
dc.relationB2010-201en_US
dc.subjectEngineering::Electrical and electronic engineering::Microelectronicsen_US
dc.titleHot carrier degradation of extended drain N-channel metal-oxide-semiconductoren_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorAng Diing Shenpen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeBachelor of Engineering (Electrical and Electronic Engineering)en_US
dc.contributor.organizationGlobalFoundriesen_US
dc.contributor.supervisoremailEDSAng@ntu.edu.sgen_US
item.grantfulltextrestricted-
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Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)
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