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https://hdl.handle.net/10356/149431| Title: | Comparative investigation of Si device with WBG devices | Authors: | Tan, Chin Ang | Keywords: | Engineering::Electrical and electronic engineering | Issue Date: | 2021 | Publisher: | Nanyang Technological University | Source: | Tan, C. A. (2021). Comparative investigation of Si device with WBG devices. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/149431 | Project: | B2246-201 | Abstract: | Power electronic systems have been in the society few decades. In the year 1970s, MOSFETs, which is Metal–Oxide–Semiconductor Field-Effect Transistors, significantly allowed designs of compact high-efficiency systems, mainly due to the tremendously improved power gain. | URI: | https://hdl.handle.net/10356/149431 | Schools: | School of Electrical and Electronic Engineering | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Student Reports (FYP/IA/PA/PI) |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| FYP REPORT.pdf Restricted Access | 3.07 MB | Adobe PDF | View/Open |
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