Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/149853
Title: Designing new strained graphene devices
Authors: Ong, Kevin Ming Sheng
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2021
Publisher: Nanyang Technological University
Source: Ong, K. M. S. (2021). Designing new strained graphene devices. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/149853
Abstract: Graphene is a fascinating material with many useful properties such as high intrinsic strength and thermal conductivity, among others. It has been found that the straining of graphene allows for pseudomagnetic fields to form, causing a phenomenon known as Landau quantization, where discrete energy levels called Landau Levels form. As graphene is known to have zero bandgap, Landau quantization allows for bandgaps to form, opening up new possibilities to the applications of graphene. In this project, variations of the strain fields of graphene will be explored, as will the resulting variations of pseudomagnetic fields. This will be done using Comsol Multiphysics in order to simulate graphene sheets along with strain fields. Along with the results, known literature will be reviewed to give greater understanding as to how strain fields can affect pseudomagnetic fields, and what work can be done in the future to build upon the current knowledge.
URI: https://hdl.handle.net/10356/149853
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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