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Title: | Designing new strained graphene devices | Authors: | Ong, Kevin Ming Sheng | Keywords: | Engineering::Electrical and electronic engineering::Semiconductors | Issue Date: | 2021 | Publisher: | Nanyang Technological University | Source: | Ong, K. M. S. (2021). Designing new strained graphene devices. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/149853 | Abstract: | Graphene is a fascinating material with many useful properties such as high intrinsic strength and thermal conductivity, among others. It has been found that the straining of graphene allows for pseudomagnetic fields to form, causing a phenomenon known as Landau quantization, where discrete energy levels called Landau Levels form. As graphene is known to have zero bandgap, Landau quantization allows for bandgaps to form, opening up new possibilities to the applications of graphene. In this project, variations of the strain fields of graphene will be explored, as will the resulting variations of pseudomagnetic fields. This will be done using Comsol Multiphysics in order to simulate graphene sheets along with strain fields. Along with the results, known literature will be reviewed to give greater understanding as to how strain fields can affect pseudomagnetic fields, and what work can be done in the future to build upon the current knowledge. | URI: | https://hdl.handle.net/10356/149853 | Schools: | School of Electrical and Electronic Engineering | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Student Reports (FYP/IA/PA/PI) |
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File | Description | Size | Format | |
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FYP Final Report_U1721703A.docx.pdf Restricted Access | 1.85 MB | Adobe PDF | View/Open |
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