Please use this identifier to cite or link to this item:
Title: Evaluation of fan-out wafer level package strength
Authors: Xu, Cheng
Zhong, Zhao-Wei
Choi, Won-kyoung
Keywords: Engineering::Mechanical engineering
Issue Date: 2019
Source: Xu, C., Zhong, Z. & Choi, W. (2019). Evaluation of fan-out wafer level package strength. Microelectronics International, 36(2), 54-61.
Journal: Microelectronics International
Abstract: Purpose: The fan-out wafer level package (FOWLP) becomes more and more attractive and popular because of its flexibility to integrate diverse devices into a very small form factor. The strength of ultrathin FOWLP is low, and the low package strength often leads to crack issues. This paper aims to study the strength of thin FOWLP because the low package strength may lead to the reliability issue of package crack. Design/methodology/approach: This paper uses the experimental method (three-point bending test) and finite element method (ANSYS simulation software) to evaluate the FOWLP strength. Two theoretical models of FOWLP strength are proposed. These two models are based on the location of FOWLP initial fracture point. Findings: The results show that the backside protection tape does not have the ability to enhance the FOWLP strength, and the strength of over-molded structure FOWLP is superior to that of other structure FOWLPs with the same thickness level. Originality/value: There is ample research about the silicon strength and silicon die strength. However, there is little research about the package level strength and no research about the FOWLP strength. The FOWLP is made up of various materials. The effect of individual component and external environment on the FOWLP strength is uncertain. Therefore, the study of strength behavior of FOWLP is significant.
ISSN: 1356-5362
DOI: 10.1108/MI-06-2018-0040
Rights: © 2019 Emerald Publishing Limited. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MAE Journal Articles

Page view(s)

Updated on May 14, 2022

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.