Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/150389
Title: Highly stable and efficient planar perovskite solar cells using ternary metal oxide electron transport layers
Authors: Thambidurai, Mariyappan
Shini, Foo
Harikesh, Padinhare Cholakkal
Mathews, Nripan
Dang, Cuong
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2019
Source: Thambidurai, M., Shini, F., Harikesh, P. C., Mathews, N. & Dang, C. (2019). Highly stable and efficient planar perovskite solar cells using ternary metal oxide electron transport layers. Journal of Power Sources, 448, 227362-. https://dx.doi.org/10.1016/j.jpowsour.2019.227362
Project: MOE2017-T1-002-142 
Journal: Journal of Power Sources 
Abstract: In planar perovskite solar cells, the electron transport layer (ETL) plays a vital role in effective extraction and transportation of photogenerated electrons from the perovskite layer to the cathode. Ternary metal oxides exhibit excellent potentials as ETLs since their electrical and optical properties are attunable through simple compositional adjustments. In this paper, we demonstrate the use of solution-processed zinc oxide (ZnO) and zinc tin oxide (ZTO) films as highly efficient ETLs for perovskite solar cells. We observe poor compatibility between ZnO and perovskite which impedes device reproducibility, stability, and performance unlike ZTO ETL devices. Furthermore, we modify the ZTO/perovskite interface by introducing a thin passivating SnO2 interlayer. The Zn1Sn1Ox/SnO2 ETL device demonstrates paramount power conversion efficiency (PCE) of 19.01% with corresponding short circuit current density (Jsc), open circuit voltage (Voc), and fill factor (FF) values of 21.93 mA cm−2, 1.10 V, and 78.82%. Moreover, the Zn1Sn1Ox/SnO2 ETL device displays superior stability, maintaining 90% of its initial PCE after 90 days in the absence of encapsulation at relative humidity of 30–40%. Enhancement in charge extraction, favourable energy alignment, and reduction in recombination sites greatly contribute to the optimal performance, stability, and reproducibility of the Zn1Sn1Ox/SnO2 ETL device.
URI: https://hdl.handle.net/10356/150389
ISSN: 0378-7753
DOI: 10.1016/j.jpowsour.2019.227362
Rights: © 2019 Elsevier B.V. All rights reserved. This paper was published in Journal of Power Sources and is made available with permission of Elsevier B.V.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
ERI@N Journal Articles
MSE Journal Articles

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