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|Title:||Enhancement of thermoelectric performance for n‑type PbS through synergy of gap state and fermi level pinning||Authors:||Luo, Zhong-Zhen
Bailey, Trevor P.
Dravid, Vinayak P.
Kanatzidis, Mercouri G.
|Keywords:||Engineering::Materials||Issue Date:||2019||Source:||Luo, Z., Hao, S., Cai, S., Bailey, T. P., Tan, G., Luo, Y., Spanopoulos, I., Uher, C., Wolverton, C., Dravid, V. P., Yan, Q. & Kanatzidis, M. G. (2019). Enhancement of thermoelectric performance for n‑type PbS through synergy of gap state and fermi level pinning. Journal of the American Chemical Society, 141(15), 6403-6412. https://dx.doi.org/10.1021/jacs.9b01889||Project:||2018-T2-1
|Journal:||Journal of the American Chemical Society||Abstract:||We report that Ga-doped and Ga–In-codoped n-type PbS samples show excellent thermoelectric performance in the intermediate temperature range. First-principles electronic structure calculations reveal that Ga doping can cause Fermi level pinning in PbS by introducing a gap state between the conduction and valence bands. Furthermore, Ga–In codoping introduces an extra conduction band. These added electronic features lead to high electron mobilities up to μH ∼ 630 cm2 V–1 s–1 for n of 1.67 × 1019 cm–3 and significantly enhanced Seebeck coefficients in PbS. Consequently, we obtained a maximum power factor of ∼32 μW cm–1 K–2 at 300 K for Pb0.9875Ga0.0125S, which is the highest reported for PbS-based systems giving a room-temperature figure of merit, ZT, of ∼0.35 and ∼0.82 at 923 K. For the codoped Pb0.9865Ga0.0125In0.001S, the maximum ZT rises to ∼1.0 at 923 K and achieves a record-high average ZT (ZTavg) of ∼0.74 in the temperature range of 400–923 K.||URI:||https://hdl.handle.net/10356/150567||ISSN:||0002-7863||DOI:||10.1021/jacs.9b01889||Rights:||© 2019 American Chemical Society. All rights reserved.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MSE Journal Articles|
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