Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/150681
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dc.contributor.authorWang, Ranen_US
dc.date.accessioned2021-06-23T00:52:25Z-
dc.date.available2021-06-23T00:52:25Z-
dc.date.issued2021-
dc.identifier.citationWang, R. (2021). Development of GaN-based high power density three-phase inverter. Master's thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/150681en_US
dc.identifier.urihttps://hdl.handle.net/10356/150681-
dc.description.abstractWith the development of semiconductor technology, wide band gap semiconductor materials show more advantages than traditional semiconductor materials in many aspects, especially in high voltage and high frequency condition. In this project, GaN semiconductor material is used to make a three-phase inverter and FOC technology is used to control motor rotation. The superior properties of GaN compared to Si and SiC are elaborated and the principle of FOC control is also explained. A model is established and simulated with MATLAB. Apart from it, the paper elaborates the hardware and software design of the power system, including PCB board design, microcontroller and device selection. At the end of the paper, the GaN inverter is evaluated by testing the circuit.en_US
dc.language.isoenen_US
dc.publisherNanyang Technological Universityen_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleDevelopment of GaN-based high power density three-phase inverteren_US
dc.typeThesis-Master by Courseworken_US
dc.contributor.supervisorJosep Pouen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Science (Power Engineering)en_US
dc.contributor.supervisoremailj.pou@ntu.edu.sgen_US
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