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|Title:||Mid-infrared GaN/AlGaN quantum cascade detector grown on silicon||Authors:||Dror, Ben
|Keywords:||Engineering::Electrical and electronic engineering||Issue Date:||2019||Source:||Dror, B., Zheng, Y., Agrawal, M., Radhakrishnan, K., Orenstein, M. & Bahir, G. (2019). Mid-infrared GaN/AlGaN quantum cascade detector grown on silicon. IEEE Electron Device Letters, 40(2), 263-266. https://dx.doi.org/10.1109/LED.2018.2885611||Journal:||IEEE Electron Device Letters||Abstract:||We demonstrate the first implementation of a GaN-based infrared photodetector epitaxially grown on silicon. The device is a GaN/AlGaN quantum cascade detector that consists of layered quantum well structure grown by plasma-assisted molecular beam epitaxy on a 4-in Si (111) substrate. The design, simulations, growth process, optical measurements and device performance are presented and discussed. The photosignal, centered at a wavelength of 4.4 μm, is resolved up to 150 K. The zero bias responsivity is 44 μA/W at 19 K and the detectivity is 2 × 10 8 Jones.||URI:||https://hdl.handle.net/10356/150803||ISSN:||0741-3106||DOI:||10.1109/LED.2018.2885611||Rights:||© 2018 IEEE. All rights reserved.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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