Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/150803
Title: Mid-infrared GaN/AlGaN quantum cascade detector grown on silicon
Authors: Dror, Ben
Zheng, Yuanjin
Agrawal, M.
Radhakrishnan, K.
Orenstein, Meir
Bahir, Gad
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2019
Source: Dror, B., Zheng, Y., Agrawal, M., Radhakrishnan, K., Orenstein, M. & Bahir, G. (2019). Mid-infrared GaN/AlGaN quantum cascade detector grown on silicon. IEEE Electron Device Letters, 40(2), 263-266. https://dx.doi.org/10.1109/LED.2018.2885611
Journal: IEEE Electron Device Letters
Abstract: We demonstrate the first implementation of a GaN-based infrared photodetector epitaxially grown on silicon. The device is a GaN/AlGaN quantum cascade detector that consists of layered quantum well structure grown by plasma-assisted molecular beam epitaxy on a 4-in Si (111) substrate. The design, simulations, growth process, optical measurements and device performance are presented and discussed. The photosignal, centered at a wavelength of 4.4 μm, is resolved up to 150 K. The zero bias responsivity is 44 μA/W at 19 K and the detectivity is 2 × 10 8 Jones.
URI: https://hdl.handle.net/10356/150803
ISSN: 0741-3106
DOI: 10.1109/LED.2018.2885611
Rights: © 2018 IEEE. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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