Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/150803
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dc.contributor.authorDror, Benen_US
dc.contributor.authorZheng, Yuanjinen_US
dc.contributor.authorAgrawal, M.en_US
dc.contributor.authorRadhakrishnan, K.en_US
dc.contributor.authorOrenstein, Meiren_US
dc.contributor.authorBahir, Gaden_US
dc.date.accessioned2021-06-08T09:13:26Z-
dc.date.available2021-06-08T09:13:26Z-
dc.date.issued2019-
dc.identifier.citationDror, B., Zheng, Y., Agrawal, M., Radhakrishnan, K., Orenstein, M. & Bahir, G. (2019). Mid-infrared GaN/AlGaN quantum cascade detector grown on silicon. IEEE Electron Device Letters, 40(2), 263-266. https://dx.doi.org/10.1109/LED.2018.2885611en_US
dc.identifier.issn0741-3106en_US
dc.identifier.other0000-0003-4566-2422-
dc.identifier.other0000-0002-8910-3297-
dc.identifier.other0000-0002-1644-4365-
dc.identifier.urihttps://hdl.handle.net/10356/150803-
dc.description.abstractWe demonstrate the first implementation of a GaN-based infrared photodetector epitaxially grown on silicon. The device is a GaN/AlGaN quantum cascade detector that consists of layered quantum well structure grown by plasma-assisted molecular beam epitaxy on a 4-in Si (111) substrate. The design, simulations, growth process, optical measurements and device performance are presented and discussed. The photosignal, centered at a wavelength of 4.4 μm, is resolved up to 150 K. The zero bias responsivity is 44 μA/W at 19 K and the detectivity is 2 × 10 8 Jones.en_US
dc.language.isoenen_US
dc.relation.ispartofIEEE Electron Device Lettersen_US
dc.rights© 2018 IEEE. All rights reserved.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleMid-infrared GaN/AlGaN quantum cascade detector grown on siliconen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doi10.1109/LED.2018.2885611-
dc.identifier.scopus2-s2.0-85058162212-
dc.identifier.issue2en_US
dc.identifier.volume40en_US
dc.identifier.spage263en_US
dc.identifier.epage266en_US
dc.subject.keywordsQuantum Well Devicesen_US
dc.subject.keywordsPhotonic Integrated Circuitsen_US
item.fulltextNo Fulltext-
item.grantfulltextnone-
Appears in Collections:EEE Journal Articles

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