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Title: Two-step chemical vapor deposition synthesis of NiTe2-MoS2 vertical junctions with improved MoS2 transistor performance
Authors: Guo, Yuxi
Kang, Lixing
Zeng, Qingsheng
Xu, Manzhang
Li, Lei
Wu, Yao
Yang, Jiefu
Zhang, Yanni
Qi, Xiaofei
Zhao, Wu
Zhang, Zhiyong
Liu, Zheng
Keywords: Engineering::Materials
Issue Date: 2021
Source: Guo, Y., Kang, L., Zeng, Q., Xu, M., Li, L., Wu, Y., Yang, J., Zhang, Y., Qi, X., Zhao, W., Zhang, Z. & Liu, Z. (2021). Two-step chemical vapor deposition synthesis of NiTe2-MoS2 vertical junctions with improved MoS2 transistor performance. Nanotechnology.
Project: NRF-CRP21-2018-0007
National Natural Science Foundation of China (grants 61701402, 61804125, 61974120 and 61904148)
Key Program for International Science and Technology Cooperation Project of Shaanxi Province (grants 2018KWZ-08 and 2019KW-029)
National Key Research and Development Program of China (2019YFC1520904)
Natural Science Foundation of Shaanxi Province (grants 2017JM5135 and 2018JM6046)
Key Research and Development Program of Shaanxi Province (2018GY-025)
Foundation of the Education Department of Shaanxi Province (grans 18JK0772 and 18JK0780)
Technology Innovation Program of Xi'an 201805041YD19CG25(1)
Journal: Nanotechnology
Abstract: The primary challenge for the widespread applications of two-dimensional (2D) electronics is to achieve satisfactory electrical contacts because, during traditional metal integration process, difficulties arise due to inevitable physical damages and selectively doping. The two-dimensional metal-semiconductor junctions have attracted captivated attention for the potential applications to achieve reliable electrical contacts in future atomically thin electronics. Here we demonstrate the van der Waals epitaxial growth of 2D NiTe2-MoS2 metal-semiconductor vertical junctions which the upper NiTe2 selectively nucleates at the edge of underlying MoS2. Optical microscopy (OM), scanning electron microscopy (SEM), atomic force microscopy (AFM), and scanning transmission electron microscope (STEM) studies confirm that NiTe2-MoS2 metal-semiconductor vertical junctions are successfully synthesized. Electrical properties of the NiTe2-contacted MoS2 field-effect transistors (FETs) show higher field-effect mobilities (μFE) than those with deposited Cr/Au contacts. This study demonstrates an effective pathway to improved MoS2 transistors performance with metal-semiconductor junctions.
ISSN: 0957-4484
DOI: 10.1088/1361-6528/abe963
Rights: © 2021 IOP Publishing Ltd. All rights reserved. This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at
Fulltext Permission: embargo_20220319
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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