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dc.contributor.authorZhang, Yipingen_US
dc.contributor.authorLu, Shunpengen_US
dc.contributor.authorQiu, Yingen_US
dc.contributor.authorWu, Jingen_US
dc.contributor.authorZhang, Menglongen_US
dc.contributor.authorLuo, Dongxiangen_US
dc.identifier.citationZhang, Y., Lu, S., Qiu, Y., Wu, J., Zhang, M. & Luo, D. (2020). Experimental and modeling investigations of miniaturization in InGaN/GaN light-emitting diodes and performance enhancement by micro-wall architecture. Frontiers in Chemistry, 8, 630050-.
dc.description.abstractThe recent technological trends toward miniaturization in lighting and display devices are accelerating the requirement for high-performance and small-scale GaN-based light-emitting diodes (LEDs). In this work, the effect of mesa size-reduction in the InGaN/GaN LEDs is systematically investigated in two lateral dimensions (x- and y-directions: parallel to and perpendicular to the line where p-n directions are) both experimentally and numerically. The role of the lateral size-reduction in the x- and y-directions in improving LED performance is separately identified through experimental and modeling investigations. The narrowed dimension in the x-direction is found to cause and dominate the alleviated current crowding phenomenon, while the size-reduction in the y-direction has a minor influence on that. The size-reduction in the y-orientation induces an increased ratio of perimeter-to-area in miniaturized LED devices, which leads to improved thermal dissipation and light extraction through the sidewalls. The grown and fabricated LED devices with varied dimensions further support this explanation. Then the effect of size-reduction on the LED performance is summarized. Moreover, three-micro-walls LED architecture is proposed and demonstrated to further promote light extraction and reduce the generation of the Joule heat. The findings in this work provide instructive guidelines and insights on device miniaturization, especially for micro-LED devices.en_US
dc.relation.ispartofFrontiers in Chemistryen_US
dc.rights© 2021 Zhang, Lu, Qiu, Wu, Zhang and Luo. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.en_US
dc.titleExperimental and modeling investigations of miniaturization in InGaN/GaN light-emitting diodes and performance enhancement by micro-wall architectureen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.versionPublished versionen_US
dc.subject.keywordsLight-emitting Diodeen_US
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