Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/151165
Title: Assembly process and electrical properties of top-transferred graphene on carbon nanotubes for carbon-based 3-D interconnects
Authors: Zhu, Ye
Tan, Chong Wei
Chua, Shen Lin
Lim, Yu Dian
Vaisband, Boris
Tay, Beng Kang
Friedman, Eby G.
Tan, Chuan Seng
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2019
Source: Zhu, Y., Tan, C. W., Chua, S. L., Lim, Y. D., Vaisband, B., Tay, B. K., Friedman, E. G. & Tan, C. S. (2019). Assembly process and electrical properties of top-transferred graphene on carbon nanotubes for carbon-based 3-D interconnects. IEEE Transactions On Components, Packaging and Manufacturing Technology, 10(3), 516-524. https://dx.doi.org/10.1109/TCPMT.2019.2940511
Project: MOE2014-T2-2-105 (ARC22/15)
Journal: IEEE Transactions on Components, Packaging and Manufacturing Technology
Abstract: Carbon nanomaterials, graphene, and carbon nanotubes (CNTs) have emerged as promising materials for the integration of future advance packaging technologies. The main benefits of carbon nanomaterials include excellent electrical, thermal, and mechanical properties. In this article, the transfer process of a top graphene layer onto the as-grown CNT bundles was successfully performed with direct graphene-to-CNT contact at the interface. Four-point-probe (4PP) I-V characterization suggests that an ohmic contact was achieved between the graphene and CNTs. Low CNT bump resistance of 2.1 Ω for 90 000-μm 2 CNT area including the CNT-graphene contact resistance was obtained, demonstrating a reduction in the contact resistance between the CNT and Au under the same fabrication and measurement conditions. This work presents the preliminary results for the assembly process of top-transferred graphene on the CNTs and the electrical properties of direct CNT-graphene contact, paving the way for the implementation of full-carbon-based three-dimensional (3-D) interconnects.
URI: https://hdl.handle.net/10356/151165
ISSN: 2156-3950
DOI: 10.1109/TCPMT.2019.2940511
Rights: © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/TCPMT.2019.2940511.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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