Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/151185
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dc.contributor.authorHu, Yujiaen_US
dc.date.accessioned2021-06-11T00:44:31Z-
dc.date.available2021-06-11T00:44:31Z-
dc.date.issued2021-
dc.identifier.citationHu, Y. (2021). Non-diffraction beam for small hotspot in lithography. Master's thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/151185en_US
dc.identifier.urihttps://hdl.handle.net/10356/151185-
dc.description.abstractImproving the resolution of lithography so that more electronic components can be integrated on a smaller chip is what we always strive for. At present, the high resolution photolithography machine in the market is mainly EUV, but only ASML can make it at present, and it has a very high requirement for the precision of the instrument and equipment. In this paper, another method to improve the resolution of the lithography machine is introduced. We expect to take advantage of the properties of non-diffraction beam for high resolution lithography. Since the use of metasurface is limited, what we need to do is to test whether the properties of non-diffraction beam are still applicable to the truncation state. The properties of non-diffraction beam and their applicability to truncation are studied in this paper.en_US
dc.language.isoenen_US
dc.publisherNanyang Technological Universityen_US
dc.subjectEngineering::Electrical and electronic engineering::Optics, optoelectronics, photonicsen_US
dc.titleNon-diffraction beam for small hotspot in lithographyen_US
dc.typeThesis-Master by Courseworken_US
dc.contributor.supervisorLuo Yuen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Science (Electronics)en_US
dc.contributor.supervisoremailluoyu@ntu.edu.sgen_US
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